Bulk-like ferroelectric and piezoeletric properties of transferred-BaTiO 3 single crystal thin films
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Bulk-like ferroelectric and piezoeletric properties of transferred-BaTiO3 single crystal thin films Young-Bae Park, Jennifer L. Ruglovsky, Matthew J. Dicken and Harry A. Atwater Thomas J. Watson Laboratory of Applied Physics California Institute of Technology, Pasadena, CA 91125
ABSTRACT Layer transfer of thin BaTiO3 films onto silicon-based substrates has been investigated. H+ and He+ ion implantation created a buried sacrificial layer in the BaTiO3 single crystals. Thermodynamics and kinetics of cavity nucleation and growth at the bonding interface have been investigated and single crystal thin film layers were transferred onto amorphous Si3N4 and Pt substrates. We have found that defects generated by ion implantation in ferroelectric materials can be significantly recovered with the subsequent annealing for layer splitting. Also, after high dose ion implantation, the films remain single crystal and stoichiometry. Finally, characterization proves the layer-transferred thin films are ferroelectrically active, with domains and piezoresponse similar to bulk crystals.
INTRODUCTION Ferroelectric materials are attracting more attention in recent years because of their potential applications in the areas of microelectronics and integrated optics.[1] Furthermore, these materials have been widely applied to microelectromechanical system (MEMS) applications due to large actuation and high output force during actuation.[2] Many different methods to fabricate functional oxide thin films have been studied to obtain high quality ferroelectric active layer formation.[3] The growth of epitaxial thin films at relatively high temperature (> 600oC) have been reported using metal organic CVD (MOCVD), molecular beam epitaxy (MBE), sputtering, evaporation, atomic layer deposition (ALD), pulsed laser deposition (PLD), chemical solution deposition (CSD) and sol-gel processes in which alternate substrates such as SrTiO3 and MgO hold promise for the growth of high-quality latticematched epitaxial films. Unfortunately, integration of most of these technologies with conventional Si-based device applications has been difficult. There is considerable interest in a recent layer transfer and wafer bonding process that produces single crystal thin film layers. Light elements such as hydrogen and helium are implanted into a wafer at a specified projected range and a film of equivalent thickness is exfoliated.[4-5] Recently, successful layer transfer of semiconductors and ferroelectric materials have been reported.[6-11] In this study we have performed H+ and He+ ion implantation on single crystal BaTiO3 and subsequently bonded to Si3N4/Si and Pt/Si receptor substrates. The main purpose of this study is the investigation of the ion-induced layer transfer mechanism as a pathway toward high quality single crystal ferro/piezoelectric and electro-optic thin films. We report on the layer transfer mechanism as well as structural and performance characterization of single crystal layertransferred thin films.
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EXPERIMENTAL Bulk single cr
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