Growth and Evaluation of Magnetoelectric Cr2O3 Single Crystal Thin Films
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Growth and Evaluation of Magnetoelectric Cr2O3 Single Crystal Thin Films Nobuyuki Iwata, Takeshi Asada, Shunpei Ootsuki, and Hiroshi Yamamoto Electronics & Computer Science, College of Science & Technology, Nihon University, 7-24-1 Narashinodai, Funabashi-shi, Chiba, 274-8501, Japan ABSTRACT ―
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The Cr2O3 thin films were grown on Al2O3(1102)(r-cut sapphire), Al2O3(1120)(a-cut sapphire), and Al2O3(0001)(c-cut sapphire) substrates to apply magnetoelectric oxides to oxides electronics. The Cr2O3 is a representative magnetoelectric material with antiferromagnetic insulator with the Néel temperature of 308 K. From the results of X-ray diffraction and the reflection high energy electron diffraction, epitaxial Cr2O3 thin films were obtained on all cut sapphire substrates using off-axis DC-RF magnetron sputtering method. The epitaxial― relationship ― ― ― ― 0]//Al2O3[1120] ―and Cr2O3(1102)//Al Cr2O3[11 ― was Cr2O3[112 2O3(1102) on r-cut, and ― ― ― 00]//Al2O3[1100] and Cr2O3(1120)//Al2O3(1120) on a-cut, and Cr2O3[1120]//Al2O3[1120] and Cr2O3(0001)//Al2O3(0001) on c-cut. Optimized Cr2O3 film was obtained grown at 600°C on c-cut sapphire substrate. The surface roughness (Ra) of the film was 0.28 nm, and full width at half maximum of rocking curve for Cr2O3(0006) Bragg reflection was 0.23°. Growth difference is expected to be caused by the stacking order of atoms normal to the substrate surface and arrangement of atoms of the substrate surface. INTRODUCTION Magnetoelectric (ME) effect is interesting property for oxide electronics. The ME effect refers to the intrinsic property to induce magnetization by applying an external electric field, and vice versa[1,2]. In order to control the magnetic properties of materials, and electric properties originated from magnetic long-rage order, external magnetic field is conventionally used by flowing electric current to the wire. Whereas applying electric field to the ME materials, external magnetic field can be generated, and magnetic and electric properties can be controlled through the interface magnetic exchange interaction in the multilayer of magnetic materials and ME materials[3,4]. The Cr2O3 is a representative ME material with antiferromagnetic and insulating properties. The material is valuable for use above room temperature because the Néel temperature (TN) is 308 K. Although the ME tensor α of Cr2O3 is not so large like multiferroic materials, the ME properties have been investigated in detail and it is expected that the epitaxial growth is not so difficult due to just one constituent chromium[4-7]. However the research of Cr2O3 film is few considering the application with it[3]. From the view of application of Cr2O3 film, crystal orientation is important, because the induced magnetization depends on the ME tensor α, and two dimensional magnetic ordering at the surface depends on the growth orientation. In this report, ― ― growth condition for epitaxial Cr2O3 film was investigated on Al2O3(1102)(r-cut), Al2O3(1120)(acut), and Al2O3(0001)(c-cut) sapphire substrates
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