C-V and Capacitance Transient Analysis of Self-Implanted Amorphous Si Layers Regrown by Swept-Line Electron Beam (SLED)
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C-V AND CAPACITANCE TRANSIENT ANALYSIS OF SELF-IMPLATED AMORPHOUS SI LAYERS REGROWN BY SWEPT-LINE ELECTRON BEAM (SLED) ANNEALINGt K. J. SODA*, R. Y. DeJULE, AND B. G. STREETMAN Coordinated Science Laboratory and Department of Electrical Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
ABSTRACT It is demonstrated that swept-line electron beam (SLEB) annealing can be successfully employed to recrystallize relatively deep (-0.5 pm) Si-implanted DLTS and C-V analysis of these layers show signifiamorphous silicon layers. cant reductions in concentration of residual defects and magnitude of dopant For comparison, similar data for furnace annealed redistribution effects. material is also presented.
INTRODUCTION Recrystallization of ion-implanted amorphous layers by transient annealing The extent to which these techniques has been demonstrated by many authors [1]. processes are effective in eliminating residual damage has been explored reParticularly intercently by deep level transient spectroscopy (DLTS) [2-4]. esting are studies of self-implanted layers [5], since the ambi'uities of iminHere we report the first planted dopant-defect complexes are eliminated. vestigation of residual deep levels spatially located well within an dlectron This is accomplished by DLTS analysis of beam regrown, Si-implanted Si layer. Schottky barriers fabricated on relatively thick (-0.5 pm) recrystallized application of swept-line electron beam (SLEB) layers. We also report the first For comnarison, data for Schottky processing to amorphous ion-implanted Si. barriers fabricated on furnace regrown naterial is also presented. EXPERIMENTAL PROCEDURE The swept-line electron beam annealing apparatus has been described elsewhere A stationary, nearly rectangular electron spot (10 x 7 mm) was achieved [6]. This beam spot is wider than the by passing the beam through a grounded slit. samples studied and annealing was accomplished by translating the sample through Unlike rastered spot-bean systems, this the line beam in a continuous motion. This technique has process does not require careful overlap of annealed areas. been successfully used to activate implanted nitrogen in GaAsl_xPx [6]. 3 Devices used in this study were fabricated from 0.24 0-cm (4 x 1016 cm- ), dopant was chosen to CZ grown bulk silicon. This level of phosphorus doped provide the best compromise between Debye length limits on profile resolution and the requirement of full depletion of the regrown amorphous layer during The samples received four cold (i100 C) implants with S+ measurement [7]. These energies and the corresponding ions of energies 32, 91, 158 and 255 keV. to an ideal 0.5 pm deep, flat implanted doses were chosen to give the best fit €This work was supported by the Joint Services Electronics Program (U.S. Army, U.S. Navy, U.S. Air Force) under Contract No. N00014-79-C-0424, and by the Army Research Office under contract DAAG-29-80-C-0011. * Current Address:
Rome Air Development
Center,
Hanscom AFB,
MA 01731.
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