Carbon Nanotubes: Theoretical Concepts and Research Strategies for Engineers A.K. Haghi and Sabu Thomas
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apter 3 briefly describes the major bulk crystal growth and epitaxy methods divided into two groups: those driven by phase changes and those driven by chemical reactions. The former includes growth from melts (such as the Czochralski and Bridgman methods) and solutions, sublimation and condensation, and liquid-phase epitaxy. The latter includes chemical vapor deposition and vapor-phase epitaxy. Examples from specific material systems (primarily semiconductors) are also presented. Chapter 4 recounts the wide variety of defects that occur in crystals and how they are detected and quantified. Defects discussed include zero-, one-, two- and three-dimensional defects, dislocations, stacking faults, antiphase boundaries, twins, inclusions, precipitates, and voids. X-ray topography, scanning and
Carbon Nanotubes: Theoretical Concepts and Research Strategies for Engineers A.K. Haghi and Sabu Thomas Apple Academic Press, 2015 364 pages ISBN 978-1-77188-052-7
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arbon nanotubes are a hot topic because of their potential technological utility and economic importance. Performing experiments can be expensive and sometimes difficult; therefore, modeling and simulation are of increasing value. Combining these two topics in one book should be very useful. This book first gives an overview on the properties of carbon nanotubes and of composites incorporating carbon nanotubes. These topics are clearly written and can be understood by any engineer with a background in materials. The authors avoid discussing the theories of all these properties and applications in detail. This makes the book accessible to readers who are not physicists. On the other hand, a physicist expecting a helping hand to learn details of theory in the field will be
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MRS BULLETIN
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VOLUME 40 • AUGUST 2015
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disappointed. Thus, this book is written for engineers and not for physicists. In the Properties section, the book describes electrical properties, structural and thermal properties, and methods for synthesis. The differences between three-dimensional and one-dimensional electrical conductors are explained, as well as the differences between singleand multiple-wall nanotubes. In addition, structure and thermal properties are discussed in context of the thermodynamic properties. However, the very special mechanical properties of carbon nanotubes are not discussed. The main part of the book is devoted to modeling and simulation. All the established methods are described, ranging from quantum mechanical ab initio methods to rather experiencebased methods. The authors explain in
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transmission electron microscopy, and defect-sensitive etching are introduced as methods for detecting and quantifying these defects. This book is an excellent introduction to the field of crystal growth and characterization. It clearly defines important terms, and fundamental concepts (e.g., crystallography, thermodynamics, and transport phenomena) are well-explained, making it valuable for learning the subject. With the addition of appropriate problems, i
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