Characterization and light emission properties of osmium silicides synthesized by low energy ion implantation
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1066-A07-11
Characterization and light emission properties of osmium silicides synthesized by low energy ion implantation P. R. Poudel1, K. Hossain1, J. Li1, B. Gorman2, A. Neogi1, B. Rout1, J. L. Duggan1, and F. D. McDaniel1 1 Physics, University of North Texas, 211 Avenue A, Denton, TX, 76203 2 Material Science and Engineering, University of North Texas, 3940 North ELM st, Denton, TX, 76207 ABSTRACT: Low energy (55 KeV) Osmium ( Os- ) negative ion beam was used to implant (5x1016 atoms/cm2 ) into p-type-Si (100). The implantation was performed with the ion source of a National Electrostatic Corp. 3 MV Tandem accelerator. The implanted sample was subsequently annealed at 650 °C in a gas mixture that was 4% H2 + 96% Ar. Rutherford Backscattering spectrometry (RBS) analysis with 1.5 MeV Alpha particles was used to monitor the precipitate formation. Photoluminescence (PL) measurements were also performed to study possible applications of silicides in light emission. Cross-sectional Scanning Electron Microscopy (XSEM) was performed for topographic image of the implanted region. RBS along with PL measurements indicate that the presence of osmium silicide (Os2Si3) phase for light emission in the implanted region of the sample.
INTRODUCTION: The study of metal silicides had taken rapid initiation in the late 1970s and early 1980s with the expectation of their device applications [1]. Since then, semi-conducting transition metal silicides have been drawing considerable interest as potential candidates for optoelectronics and microelectronic devices [2-4]. The iron disilicide β-FeSi2 has been reported as one of the most promising silicides for its potential use as an optoelectronic material [5, 6]. The silicides have also been implemented as contacts for many novel devices such as nanowires/nanotubes of various materials [7]. The ultimate application of the silicides depends on how accurately the silicide phase can be controlled and how controllably the band gap is tailored. Many approaches have been employed in the formation of efficient light emitting silicon based devices [8, 9]. There has been a considerable progress in the growth of epitaxial layers and the single crystals of semi-conducting silicides for light emission and photovoltaic applications [10]. Ion implantation is one of many techniques to grow optically active crystals of metal silicides. This technique applies an accurate and predictable control of doping impurities within the surface layers [11]. In this work, we have tried to synthesize and investigate the light emission properties of osmium silicide (OsxSiy). Currently there are only a few literature reporting the synthesis of OsxSiy with the severe difficulties in the synthesis process due to low vapor pressure of osmium[12,13]. Measuring the effect of low energy Osmium negative ion implantation, in the formation of silicide phases by different compositional, structural and optical characterization techniques such as RBS, Cross-sectional Scanning Electron Microscopy (X-SEM) and PL spectroscopy is the
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