Characterization of Deep Levels in 3C-SiC by Optical-Capacitance-Transient Spectroscopy
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Characterization of Deep Levels in 3C-SiC by Optical-Capacitance-Transient Spectroscopy Y. Nakakura, M. Kato, M. Ichimura, E. Arai and Y. Tokuda* Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan * Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-0392, Japan ABSTRACT An optical-capacitance-transient spectroscopy (O-CTS) method was used to characterize the defects in 3C-SiC on Si. The O-CTS measurement enables us to estimate optical threshold energy and optical cross section for the defects. In the O-CTS spectrum, a peak was observed for photon energy hν larger than 0.5 eV. This peak was thought to be due to the ND1 center, which was also observed by deep level transient spectroscopy (DLTS) and found to have a thermal activation energy of 0.37 eV. The optical cross section for the center increased with hν for hν
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