Characterization of Polysiloxane Modified Polysilsesquioxane Films for Low Dielectric Applications: Microstructure, Elec
- PDF / 232,781 Bytes
- 6 Pages / 612 x 792 pts (letter) Page_size
- 50 Downloads / 192 Views
Characterization of Polysiloxane Modified Polysilsesquioxane Films for Low Dielectric Applications: Microstructure, Electrical Properties and Mechanical Properties Jingyu Hyeon-Lee1, Yi Yeol Lyu1, Sang Kook Mah1, Jin-Hyeong Yim1, Hyun-Dam Jeong1 1 E-Polymer Laboratory, Samsung Advanced Institute of Technology, Suwon, 440-600, Korea Mong Sup Lee2, and Sang Youl Kim2 2 Dept of Chemistry, Korea Advanced Institute of Science and Technology, Taejon, 305-701, Korea, ABSTRACT Poly(ε-caprolactone) (PCL) / poly(siloxane-silsesquioxane) (PSQ-PSSQ) nanohybrid films were fabricated. The dielectric constant of the film was scaled down from 2.66 to 2.28 when the 30% PCL was added into poly(siloxane-silsesquioxane) matrix. The FE-SEM micrograph of poly(ε-caprolactone) / poly(siloxane-silsesquioxane) (PSQ-PSSQ) nanohybrid film shows nanoporous structure. The modulus and hardness of the film decrease with increasing film thickness. As PCL content increases, modulus and hardness of the films decreases. INTRODUCTION New materials with low dielectric constants are demanded to solve the problem of RC delay in integrated circuit as the minimum geometry of microelectronic devices continues to shrink. The new materials under investigation include fluorine doped silicon oxide (SiOF) [1], organic polymers [2,3], xerogels [4], and porous spin on glasses (SOG) [5,6]. Among those materials, porous SOGs are actively studied because of their potentially very low dielectric constants. However, there are still some limitations for current uses because of problems such as mechanical stability, moisture uptake, and adhesion strength, etc [7,8]. Mechanical strength is particularly important to withstand mechanical stress conditions such as CMP on chip manufacturing processes. For future chip design, materials having low dielectric constant (k < 2.2) are required, and can be obtained by incorporating air voids into matrix. One of promising low k materials is poly(silsesquioxanes) (PSSQ), which is either in use or under development. Polysilsesquioxane (PSSQ) has a dielectric constant of 2.7-2.9 and is chosen as the polymer matrix in this paper. For lowering dielectric constant, poly(ε-caprolactone) (PCL) is chosen as thermally labile pore generator (porogen). We describe here the structure and properties of nanoporous polysiloxane (PSQ) modified polysilsesquioxane (PSSQ) film, prepared from PCL/polysiloxane (PSQ) modified PSSQ polymer blends. Especially, the correlation between mechanical properties and film thickness and porogen content has been characterized. In addition, dielectric constant of porous films has been investigated as a function of porogen content. B7.15.1 Downloaded from https://www.cambridge.org/core. Rice University, on 18 May 2020 at 09:37:19, subject to the Cambridge Core terms of use, available at https://www.cambridge.org/core/terms. https://doi.org/10.1557/PROC-716-B7.15
EXPERIMENTAL Synthesis of poly(siloxane-silsesquioxane) 2,4,6,8-tetramethyl-2,4,6,8-tetra (trimethoxysilylethyl) cyclotetrasiloxane, tetrahydrofuran, distilled
Data Loading...
