Circularly Polarized Electroluminescence of Spin LEDs with a Ferromagnetic (In, Fe)Sb Injector
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arly Polarized Electroluminescence of Spin LEDs with a Ferromagnetic (In, Fe)Sb Injector M. V. Veda*, M. V. Dorokhina, V. P. Lesnikova, A. V. Kudrina, P. B. Deminaa, A. V. Zdoroveishcheva, D. A. Pavlova, Yu. V. Usova, V. E. Milina, and Yu. A. Danilova a
N.I. Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950 Russia *e-mail: [email protected] Received March 27, 2020; revised April 10, 2020; accepted April 10, 2020
Abstract—The possibility of using a diluted magnetic semiconductor (In, Fe)Sb as a functional layer for use in spintronics, namely, as a ferromagnetic injector in a spin light emitting diode, has been investigated. The luminescent characteristics, as well as the temperature dependence of the circular polarization degree of of a spin LED electroluminescence with an (In, Fe)Sb injector, are studied. Keywords: diluted magnetic semiconductors, diode structures, A3B5 heteronanostructures, spin injection DOI: 10.1134/S1063785020070299
Currently, the field of science associated with the development and study of spin light emitting diodes (SLEDs), which are sources of circularly polarized luminescence, has experienced significant development. Mostly, multilayer structures based on ferromagnetic metals are used as injectors of spin-polarized carriers in SLEDs [1]. As an alternative, the use of diluted magnetic semiconductors (DMSs), which are promising materials for spin injectors, has been proposed. Diluted magnetic semiconductors are nonmagnetic materials doped with magnetic impurities (transition 3d metals) and, therefore, combining magnetic and semiconductor properties [2]. The main advantage of DMSs is compatibility with modern semiconductor technologies [3]. On the other hand, a drawback of most diluted magnetic semiconductors, which currently significantly limits their application, is a low Curie temperature. At present, the most studied diluted magnetic semiconductor, (Ga, Mn)As, retains ferromagnetic properties only up to 200 K, which means that spintronic devices based on this material will only function up to 200 K [4]. Therefore, the task of increasing the Curie temperature for DMSs is one of the most relevant in spintronics technology. In recent years, studies have been actively carried out on the strong doping of A3B5 materials with Fe atoms to produce diluted magnetic semiconductors (A3, Fe)B5. In [5], thin layers of a diluted magnetic semiconductor (In, Fe)Sb with a Fe content of 13% were obtained by pulsed laser deposition method. It was first shown that the Curie temperature of such a material exceeds 300 K. In [6], ferromagnetic layers of (In, Fe)Sb (Fe content of 16%) with a Curie tempera-
ture above 300 K were also obtained using molecular beam epitaxy. Earlier, in our work [7], it was shown that (In, Fe)Sb layers can be used in the structure of a spin LED as a functional contact layer when deposited on the surface of semiconductor structures formed on p-type GaAs. Based on the current–voltage characteristics and band diagrams, it was found that the injection mechan
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