Composition, Bonding state, and Electrical Properties of Carbon Nitride Films Formed by Electrochemical Deposition Techn
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Composition, Bonding state, and Electrical Properties of Carbon Nitride Films Formed by Electrochemical Deposition Technique. Hideo Kiyota1, Mikiteru Higashi1, Tateki Kurosu2, and Masafumi Chiba3 1 Department of Mechanical Systems Engineering, Tokai University, 9-1-1 Toroku, Kumamoto 862-8652, Japan 2 Department of Applied Computer Engineering, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan 3 Department of Materials Chemistry, Tokai University, 317 Nishino, Numazu, Shizuoka 4100395, Japan ABSTRACT Composition, bonding state, and electrical properties of CNx films formed by electrochemical deposition using liquid acrylonitrile were studied. X-ray photoelectron spectra reveal that C, N, and O are major components of the deposited films. From analysis of C 1s and N 1s spectra, the major bonding state in the CNx film is attributed to a mixture of CิN and partially hydrogenated C=N bond. Metal-insulator-semiconductor capacitors incorporating the CNx insulating layers are fabricated to evaluate the electrical properties of the deposited films. The lowest dielectric constant k of the CNx film is determined to be 2.6 from the accumulation capacitance and the thickness of the film. It is demonstrated that the CNx film formed by electrochemical deposition is a promising low-k material for use in ultralarge-scale integration multilevel interconnections. INTRODUCTION Multilevel interconnection is the most important technology determining the circuit performance in ultralarge-scale integrated (ULSI) devices because the scaling of device feature size results in increased signal delay, power consumption, and cross-talk interference between device interconnections. In particular, materials with dielectric constant (k) lower than 2 are required to replace silicon dioxide in ULSI interconnections. So far, much effort has been devoted to developing new low-k materials; k of between 1.8 and 2.4 have been achieved for boron carbon nitride containing hydrogen (BCNH) [1], methyl-boron nitride [2], nano-diamond [3], and pSiCOH [4]. Carbon nitride (CNx) offers great potential for a low-k dielectric material used in ULSI interconnections because of its high resistivity and low dielectric constant [5]. CNx films have been fabricated using various deposition techniques [6]. On the other hand, the liquid phase deposition of CNx films has been attempted as an alternative deposition technique using organic liquids containing nitrogen such as acetonitrile, N,N-dimethylformamide, and acrylonitrile [7-9]. In the previous works, continuous and uniform a-CNx films were obtained when acrylonitrile was used as the electrolyte, demonstrating the feasibility of using a nitrogen-containing organic liquid to form CNx films [10]. In this work, we have studied composition, bonding states, and electrical properties of CNx films deposited using liquid acrylonitrile. The CNx films were electrochemically deposited by application of a DC bias voltage to substrates immersed in acrylonitrile. The composition and bonding properties of the dep
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