Compound Semiconductors Strained Layers and Devices
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ELECTRONIC MATERIALS SERIES This series is devoted to electronic materials subjects of active research interest and provides coverage of basic scientific concepts, as well as, relating the subjects to the electronic applications and providing details of the electronic systems, circuits or devices in which the materials are used. The Electronic Materials Series is a useful reference source for senior undergraduate and graduate level students, as well as, for research workers in industrial laboratories who wish to broaden their knowledge into a new field.
Series Editors: Professor A.F.W. Willoughhy
Professor R. Hull
Dept. of Engineering Materials University of Southampton
Dept. of Material Science & Engineering University of Virginia USA
UK
Series Advisor: Dr. Peter Capper GEC-Marconi Infra-Red Ltd. Southampton
UK
Other Titles Available: 1.
Widegap /I- VI Compounds for Opto-electronic Applications Edited by E. Ruda
2.
High Temperature Electronics Edited by M. Willander and H.L. Hartnagel
3.
Narrow-gap /I-VI Compoundsfor Optoelectronic and Electromagnetic Applications Edited by Peter Capper
4.
Theory of Transport Properties of Semiconductor Nanostructures Edited by Eckehard Scholl
5.
Physical Models of Semiconductor Quantum Devices Ying Fu; Magnus Willander
6.
Quantum Effects in Semiconductor Materials and Devices, Edited by T. P. Pearsall
COMPOUNDSEMICONDUCTORS STRAINED LAYERS AND DEVICES
by
S. Jain IMECvzw Leuven, Belgium M. Willander Gothenburg University Gothenburg, Sweden R. Van Overstraeten IMECvzw Leuven, Belgium
SPRINGER SCIENCE+BUSINESS MEDIA, LLC
Library of Congress Cataloging-in-Publication Data
Jain, S.C. (Suresh C.), 1926Compound semiconductors strained layers and devices 1 by S. Jain, M. Willander, R. Van Overstraeten p. cm. -- (Electronic materials series) Includes bibliographical references and index. ISBN 978-0-7923-7769-6 ISBN 978-1-4615-4441-8 (eBook) DOI 10.1007/978-1-4615-4441-8
1.
Compound semiconductors. 2. Layer structure (Solids) 1. Willander, M. IL Overstraeten, R. van. III Title. IV. Series.
TK7871.99.C65 135 2000 621.3815'2--dc21 99-089333 Copyright ® 2000 by Springer Science+Business Media New York Originally published by Kluwer Academic Publishers in 2000 Softcover reprint of the hardcover lst edition 2000 Ali rights reserved. No part of this publication may be reproduced, stored in a retrieval system or transmitted in any form or by any means, mechanical, photocopying, recording, or otherwise, without the prior written permission of the publisher, Springer Science+Business Media, LLC.
Printed on acid-free paper.
Contents Preface 1 Introduction 1.1 Evolution of strained layers . . . . . . . . 1.2 Conventional III-V-based heterostructures 1.2.1 Unstrained heterostructures 1.2.2 Strained heterostructures 1.3 III-Nitrides . . . . . . . . . . 1.3.1 Properties . . . . . . . . . 1.3.2 Historical perspective .. 1.4 Wide bandgap II-VI semiconductors 1.4.1 Crystal structure, phase diagram and growth 1.4.2 Historical perspective . . . . . . 1.5 Material parameters
