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Conducting Oxide Electrode to Mitigate Mechanical Instability (Bubble Formation) during Operation of La1-xSrxMnO3 (LSMO) based RRAM Rajashree Nori1, N. Ravi Chandra Raju1, Naijo Thomas1, Neeraj Panwar1, Pankaj Kumbhare1, Gurudatt Rao2, Senthil Srinivasan1, N. Venkataramani2 and U. Ganguly1 1 Center of Excellence in Nanoelectronics, Indian Institute of Technology-Bombay, Mumbai 400076, India 2 Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology-Bombay, Mumbai 400076, India ABSTRACT The role of field-induced electrochemical migration oxygen ions in switching behaviour of LSMO films is established through I-V measurements under various top electrode device configurations. We report observation of bubbling, mechanical damage and delamination of top electrode in LSMO-based large area RRAM devices. Polarity dependence of this phenomenon, as observed in-situ during electrical measurements, reveals O-evolution to be the likely cause for such electrode damage. The effect of this phenomenon on switching behaviour of devices with reactive as well as inert top electrodes is presented. To mitigate the electrode integrity issue, we explore the use of conducting oxide electrodes on the active LSMO film. INTRODUCTION Bipolar RRAM memory is known to show technological promise in terms of achieving high endurance, device scalability and switching speeds [1]. Various classes of transition metal oxides are reported to have exhibited bipolar resistance switching behaviour [1,2], one of them being colossal magnetoresistant (CMR) manganites such as Pr1-xCaxMnO3 (PCMO) and La1xSrxMnO3 (LSMO) – where x: 0