Conductive LaNiO 3 electrode grown by pulsed laser ablation on Si substrate
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Conductive LaNiO3 electrode grown by pulsed laser ablation on Si substrate Li Sun and Tao Yu National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People’s Republic of China
Yan-Feng Chen National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People’s Republic of China
Jun Zhou Department of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People’s Republic of China
Nai-Ben Ming National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People’s Republic of China (Received 20 February 1996; accepted 21 October 1996)
Using the pulsed laser ablation (PLA) technique, conductive LaNiO3 thin films have been successfully grown on (001) Si substrates. The XRD u-2u scan patterns indicate a preferential (110) orientation, and the electron probe microanalyzer (EPMA) investigations show that the three elements La, Ni, and O distribute uniformly in the films. The resistivity of the as-deposited LaNiO3 films display a metallic character. Polycrystalline PbTiO3 films are deposited by metalorganic chemical vapor deposition (MOCVD) on these LaNiO3 electrodes. Ferroelectricity measurements of the PbTiO3yLaNiO3 heterostructure prove LaNiO3 to be a promising electrode material in the integration of ferroelectrics and Si wafer.
I. INTRODUCTION
Among various oxides, the use of perovskite-type conductive materials as electrodes favors the growth of high quality ferroelectric thin films such as PZT and PLZT due to the similar structure and small lattice mismatch.1–4 These heterostructures have shown great promise for use in ferroelectric random access memories (FRAM), infrared (IR) detectors, electro-optic devices, and high-frequency transducers.5–7 Integration of ferroelectric thin films with the Si semiconductor technique has stimulated extensive investigations in recent years. The traditional Pt, Ti electrodes directly deposited on Si at the growth temperature of several hundred degrees centigrade will form silicides, preventing the further growth of ferroelectrics.8,9 Perovskite cuprate superconducting electrodes such as YBa2 Cu3 O7–x (YBCO) and Bi2 Sr2 Cu2 O8–x (BSCCO) still suffer from poor chemical and thermal stability and rough surfaces.10 As a perovskite Pauli paramagnetic, LaNiO3 exhibits a metallic property with a resistivity of ,1025 V ? m at room temperature. The rhombohedral lattice of LaNiO3 can be regarded as a pseudocubic structure with ˚ Satyalakshmi and the lattice constant of a 3.84 A. Hegde et al.11,12 have reported the results of fabrication J. Mater. Res., Vol. 12, No. 4, Apr 1997
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and characterization of LaNiO3 thin films on SrTiO3 , LaAlO3 , and YSZ substrates. In our paper, we report the use of conductive LaNiO3 thin films as the electrode for the fabrication of a metal/ferroelectrics/metal/Si capacitor. Our experiment proved the possib
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