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Refractory Metals and Silicides Featured at European Workshop The European Workshop on Refractory Metals and Silicides took place in Saltsjobaden, outside Stockholm, Sweden, March 24-27,1991. Nearly 70 contributions, half oral and half poster présentations, covered the field from thin film reactions and physical properties to applications. A one-day topical conférence on chemical vapor déposition (CVD) extended the workshop to four days. The fourth in a biennial séries, this meeting was organized by the Department of Solid State Electronics at the Royal Institute of Technology in coopération with the European Materials Research Society and EEEE. The CVD session included invited talks by R. Madar, w h o focused on lowtemperature and sélective silicide déposition, and J.O. Carlsson, who gave an account 6( the basic principles of sélective métal CVD. Sélective déposition of TiSi2 by rapid thermal processes was covered by A. Bouteville and by J.L. Regolini. However, most of the CVD contributions dealt with déposition and properties of tungsten layers, with some focus on application issues such as adhésion, device properties, and cost. Various aspects of self- and impurity diffusion were discussed. In an invited talk, P. Gas elucidated the influence of various diffusion paths, solubility limits, ségrégation, etc. on diffusion experiments. Previously
overlooked conditions for the utility of tracer éléments in reactive growth studies were reported by S.L. Zhang. J. Philibert discussed reactive diffusion and thin film reactions, and stressed the basic identity of thin film and bulk processes. The thin film session also covered work on interface and grain boundary properties and included contributions on carbides and germanides. H. von Kanel reviewed epitaxial silicide growth; R. Jebasinski, K. Maex, and A. Vantomme ail described spécifie work on ion beam synthesis of buried CoSi2 layers. The strong position maintained by TiSi2, due to its self-aligned capabilities, was reflected in several papers on formation, dopant interactions, and shallow junction properties. Potential and obstacles for the incorporation of refractory metals and silicides in advanced technologies were discussed by C M . Osburn and K. Maex. Osburn emphasized that the problems are important and that reduced device dimensions not only call for resistance-reducing solutions, but also aggravate the difficulties assotiated with a successful silicide implementation. Various complications of a procèss, such as polymer residues or high dopant concentrations, rriay affect the silicide formation in an irreproduçible manner. Shallow junctions call for thin silicide layers, plagued by stability and uniformity limitations. One possibility for producing silicide junctions is to reverse the order of junction and silicide formation, i.e., to use the silicide as a dopant diffusion source. Another solution, which may be required in future
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