Correction to: Impact of film thickness on optical properties and optoelectrical parameters of novel CuGaGeSe 4 thin fil
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Correction to: Impact of film thickness on optical properties and optoelectrical parameters of novel CuGaGeSe4 thin films synthesized by electron beam deposition Ahmed Saeed Hassanien1,2 · Hatem R. Alamri3 · I. M. El Radaf4,5
© Springer Science+Business Media, LLC, part of Springer Nature 2020
Correction to: Optical and Quantum Electronics (2020) 52:335 https://doi.org/10.1007/s11082-020-02448-9 Figure 2 has been published incorrectly in the original publication of the article. The correct version of the figure is provided with this correction.
The original article can be found online at https://doi.org/10.1007/s11082-020-02448-9. * I. M. El Radaf [email protected]; [email protected]
Ahmed Saeed Hassanien [email protected]; [email protected]
1
Engineering Mathematics and Physics Department, Faculty of Engineering at Shoubra ‑ Cairo, Benha University, Benha 11629, Egypt
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Physics Department, Faculty of Science and Humanities in Afif Governorate, Shaqra University, Afif 11921, Kingdom of Saudi Arabia
3
Physics Department, Al Jumum University College, Umm Al-Qura University, Makkah 21955, Kingdom of Saudi Arabia
4
Physics Division, Electron Microscope and Thin Films Department, National Research Centre, Dokki, Giza 12622, Egypt
5
Materials Physics and Energy Laboratory, College of Sciences and Art at ArRass, Qassim University, Ar Rass 51921, Kingdom of Saudi Arabia
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Fig. 2 The FE-SEM micrographs of the C uGaGeSe4 thin films at different magnification powers, as depicted, the ternary CuGaGeSe4 thin-film samples have a homogeneous surface and free crack samples
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