Impact of film thickness on optical properties and optoelectrical parameters of novel CuGaGeSe 4 thin films synthesized
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Impact of film thickness on optical properties and optoelectrical parameters of novel CuGaGeSe4 thin films synthesized by electron beam deposition Ahmed Saeed Hassanien1,2 · Hatem R. Alamri3 · I. M. El Radaf4,5 Received: 14 January 2020 / Accepted: 17 June 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract The authors in this article present the synthesis of good quality C uGaGeSe4 thin films of different thicknesses using electron beam deposition on well pre-cleaned glass substrates. X-ray diffraction patterns displayed the amorphous nature of as-prepared CuGaGeSe4 thin films. In addition, the elemental compositional analysis of these films was examined by the energy-dispersive X-ray spectroscopy technique, which showed that there is good matching between the selected and detected percentages. Transmittance and reflectance spectra of these CuGaGeSe4 samples were measured to experimentally determine the absorption coefficient and some related optical parameters. Optical band-gap energy values of samples were determined via Tauc’s Plots; they are arisen owing to the indirect allowed transition. They are decreased from 1.43 to 1.29 eV by increasing the film thickness from 250 to 445 nm. The skin depth, absorption index, and refractive index of CuGaGeSe4 thin films were also obtained and extensively studied. As well as, some optoelectrical parameters of these investigated films were discussed, like optical resistivity, optical mobility, optical conductivity, the lattice dielectric constant, and the ratio of the charge carrier concentrations to the effective mass (Nopt/m*). Along with, some nonlinear optical parameters of CuGaGeSe4 films were studied employing Miller’s formulas. The values of the dispersion energy, static refractive index, the static dielectric constant, the oscillator strength and others increase, while the oscillator energy and the relaxation time decrease as the film thickness increased. The obtained results showed that these C uGaGeSe4 film samples can be successfully used as absorption layers in thin-film solar cells. Keywords CuGaGeSe4 thin films · Electron beam deposition · Optical conductivity · Optical constants · Third-order nonlinear optical susceptibility
* I. M. El Radaf [email protected]; [email protected] Extended author information available on the last page of the article
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1 Introduction Recently, the quaternary chalcogenide glasses, ChG based on the copper element have attracted high interest owing to their distinguished and interesting optical, optoelectronic, and electrical properties. These ChG semiconducting compounds have high thermal stability and high absorption coefficient (Hassanien et al. 2020a, b; Aldakov et al. 2013; Chen et al. 2009, 2010). These unique properties make these quaternary chalcogenides suitable for different applications like the optical memory devices, absorber layer for solar cells, IR sensors, and photodetectors (Hassanien and Akl 2018c;
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