Correction to: Theoretical prediction of radiation-enhanced diffusion behavior in nickel under self-ion irradiation
- PDF / 165,241 Bytes
- 1 Pages / 595.276 x 790.866 pts Page_size
- 81 Downloads / 175 Views
CORRECTION
Correction to: Theoretical prediction of radiation-enhanced diffusion behavior in nickel under self-ion irradiation Xiao-Ya Chen1,2 • A-Li Wen2 • Cui-Lan Ren2,3 • Cheng-Bin Wang2,3 Wei Zhang2,3 • He-Fei Huang2 • Zhi-Wen Chen1 • Ping Huai2,4,5
•
Published online: 17 September 2020 Ó China Science Publishing & Media Ltd. (Science Press), Shanghai Institute of Applied Physics, the Chinese Academy of Sciences, Chinese Nuclear Society and Springer Nature Singapore Pte Ltd. 2020
Correction to: NUCL SCI TECH (2020) 31:79 https://doi.org/10.1007/s41365-020-00791-w
In the original publication, there is a mistake in Eq. (9) and its explanations (Sect. 2.2). The correction is as follows: Dv ¼ aa20 m0 exp Hvm =kB T ð9Þ
Furthermore, the production rate of freely migrating defects, K0 =K, used in this work (Table 1) should be 0.03 (assumed). The authors would like to apologize for the inconvenience caused.
where a0 is the lattice constant and m0 is the attempt frequency for vacancy exchange [1, 27], kB is the Boltzmann’s constant. For a fcc lattice, each atom has 12 nearest neighbors (z = 12), and the jump distance is Aa0 ¼ p1ffiffi2 a0 . Then, we have a ¼ 1=6zA2 ¼ 1 [1].
The original article can be found online at https:// doi.org/10.1007/s41365-020-00791-w. & Cui-Lan Ren [email protected] & Zhi-Wen Chen [email protected] 1
School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444, China
2
Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China
3
Key Laboratory of Interfacial Physics and Technology, Chinese Academy of Sciences, Shanghai 201800, China
4
Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, China
5
School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
123
Data Loading...
