• PDF / 293,771 Bytes
• 6 Pages / 420.48 x 639 pts Page_size
• 17 Downloads / 292 Views

DOWNLOAD

REPORT

Diffusion of Au in Amorphous Si During Ion-Beam Irradiation F. pRIOLO*(a), J. M. POATE*, D. C. JACOBSON*, J. LINNROS*(b) J. L. BATSTONE*(c) and S. U. CAMPISANO** *AT&T Bell Laboratories, Murray Hill, NJ 07974 "**University of Catania, Sicily, Italy

ABSTRACT We have measured the radiation-enhanced diffusion of Au in amorphous Si in the temperature range 77-700 K. Gold was implanted to depths of 500A at concentrations of an atomic %. The samples were than amorphized to depths of -2gm using MeV Ar implants at liquid nitrogen temperature. Radiation-enhanced diffusion was induced by a 2.5 MeV Ar beam at doses of 2x101 -2x10 17 /cm2 and dose rates of 7x10 12 -7x101 /cm 2 sec. The diffusion coefficients show three well defined regions. At temperatures

Recommend Documents

Diffusion of Au in Amorphous Si Measured by the Artificial Multilayer Technique

163 91 383KB

Diffusion, Solubility and Segregation of Implanted Cu, Ag and Au in Amorphous Si

173 106 641KB

Stability of Nanometer-Size Si Crystals in Amorphous Si Thin Films under Ion Irradiation

194 75 1MB

Point Defect Injection and Enhanced Sb Diffusion in Si During Co-Si and Ti-Si Reactions

219 65 2MB

Dopant diffusion in amorphous silicon

234 9 1MB

Tuning series resistance in Au/Alq3/n-Si diodes with high-energy e-Beam irradiation

162 16 3MB

Modification of an SiO $${}_{2}$$ (Au)/Si Surface by Irradiation with Argon Ions

158 115 1MB

Initial Interaction of Crystalline Al/Amorphous Si Bilayer during Annealing

163 6 1016KB

Multiple Pulse Irradiation Effects in Excimer Laser-Induced Crystallization of Amorphous Si Films

223 24 2MB

Dose Dependence of Ion Beam Mixing of Au on Amorphous and Single Crystalline Si and Ge

186 60 334KB

Electron Irradiation on Amorphous Silicon

213 14 49KB

Phase Transitions in Amorphous SI Produced by Pulsed Laser or Electron Irradiation

210 53 1MB