Cost-effective SnS heterojunction solar cells synthesized by spray pyrolysis
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ORIGINAL PAPER: NANO-STRUCTURED MATERIALS (PARTICLES, FIBERS, COLLOIDS, COMPOSITES, ETC.)
Cost-effective SnS heterojunction solar cells synthesized by spray pyrolysis R. Shashidhar
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Nityanand Choudhary
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Received: 27 February 2020 / Accepted: 18 August 2020 / Published online: 1 September 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract The present study reports, synthesis and fabrication of SnS/n-Si (100) heterojunction solar cell by a cost-effective spray pyrolysis technique. XRD peaks resemble orthorhombic SnS. XRD and SEM study reveals crystal/grain size as 15 and 26.4 nm, respectively. The SnS surface is closely packed, and composition of Sn and S element weight% found to be 96.58 and 3.42, respectively, and hot probe method confirms intrinsic p-type conductivity due to excesses Tin in films. Raman spectral analysis confirms the SnS phase along with Sn2S3 and SnS2. Isochronal and isothermal studies show that film sheet resistivity attains lowest value of 1.7248 × 10−2 Ωcm when annealed at 200 °C for 15 min. From M-S contact studies, estimated reverse saturation current density, ideality factor, knee voltage, barrier potential, and disorder energy are found to be 3.0563 × 10−10 A cm−2, 1.5225, 0.158 V, 0.7669 eV, and 0.0864 eV. Solar cell exhibits a typical rectifying diode behavior and its series resistance decreases from 41.44 to 16.66 kΩ as film thickness increases from 37 to 63 nm under illumination of 206 mW cm−2. Graphical Abstract Cross section, top view, band diagram of Ag/SnS/n-Si /Al heterojunction solar cell
Keywords
Spray pyrolysis SnS Isochronal Isothermal n Si Heterojunction ●
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Highlights Fabrication of SnS/n-Si (100) heterojunction solar cell by cost-effective spray pyrolysis technique. ● XRD, SEM, EDS studies confirm the formation of orthorhombic, closely packed, stoichiometric films. ● Hot probe and Raman spectral analysis confirm the p-type and SnS phase along with Sn2S3 and SnS2. ● Isochronal and isothermal treatment further reduces film sheet resistivity. ● Cell exhibits a typical rectifying diode behavior, variable series resistance as a function of thickness. ●
1 Introduction * R. Shashidhar [email protected] 1
Department of Physics, J S S Academy of Technical Education, Bangalore 560060, India
SnS is a potential photovoltaic material which is available profusely in earth and has attracted immense interest of researcher due to its non-toxic nature and absorption tunable band gap in the visible range [1–5]. SnS material has a high
Journal of Sol-Gel Science and Technology (2020) 96:188–196
light absorption coefficient and an optical band gap in the range of nearly 1.3 eV [1–4, 6]. These films manifest an intrinsic p-type conductivity [1, 7]. SnS films have been mostly synthesized by a number of techniques such as electro deposition [3], SILAR [5], thermal evaporation [8], vacuum evaporation [9], electron beam evaporation [10], sol–gel [11], chemical bath deposition [12] and spray pyrolysis (SP) [13].
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