Effect of fluorine doping concentration on efficiency of ZnO/p-Si heterojunction solar cells fabricated by spray pyrolys
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Effect of fluorine doping concentration on efficiency of ZnO/p-Si heterojunction solar cells fabricated by spray pyrolysis Namık Akc¸ay1,* 1
Department of Physics, Faculty of Science, Istanbul University, Vezneciler, 34314 Istanbul, Turkey
Received: 8 September 2020
ABSTRACT
Accepted: 22 October 2020
The paper reports the fabrication of fluorine-doped zinc oxide/p- silicon (ZnO/ p-Si) heterojunction solar cells and the effects of fluorine content on efficiency of these solar cells. Fluorine-doped zinc oxide nanoparticles (FZO) were synthesized using sol–gel method and heterojunctions of n-FZO/p-Si solar cells were fabricated by the spray pyrolysis technique. FZO thin films were also deposited on the glass substrate under the same conditions for the investigation of their optical properties. The structural characterizations of FZO films were investigated using scanning electron microscopy (SEM) and X-ray diffraction (XRD). Optical characterization of these thin films was studied by UV–Vis spectroscopy and transmittance values of over 84% were obtained at the visible region. The current–voltage characteristic of the n-FZO/p-Si heterojunction solar cells was measured at room temperature in the dark and under illumination (90 mW/ cm2). Series resistance (Rs) values obtained from solar cells were found between 5.52 and 10.12 X. The conversion efficiency of the fabricated solar cell of between 3.82 and 6.74% was obtained.
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Springer Science+Business
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1 Introduction Zinc oxide (ZnO) films are very promising transparent conductive oxide (TCO) materials because of their unique optical and electrical properties combined with non-toxic, low production cost, and relatively low deposition temperature [1–3]. These advantages make ZnO useful in a wide range of applications such as solar cells, UV detectors, gas sensors, and field effect transistors (FED) [4–7].
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https://doi.org/10.1007/s10854-020-04747-z
The physical properties of ZnO films mostly vary depending on deposition techniques and conditions. Various methods have been sophisticated in order to achieve transparent and conductive ZnO thin films, including spray pyrolysis, spin-coating, and RF magnetron sputtering methods [8–10]. Among all these methods, spray pyrolysis is the most useful method for the cost reduction of cell fabrication due to facility and fast deposition rate. As it is well known, intrinsic ZnO is a n-type semiconductor due to oxygen vacancies and the
J Mater Sci: Mater Electron
ionization of zinc interstitials that act as donor levels [11]. The doping of ZnO can be one of the efficacious ways to heal its electrical properties. A number of typical dopant elements such as aluminum (Al) [12, 13], boron (B) [14, 15], fluorine (F) [16–18], gallium (Ga) [19], indium (In) [20], and tin (Sn) [21] have been used so far to improve conductivity of ZnO films. Beyond other elements, fluorine provides a suitable anion doping for ZnO because its ionic radius (
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