Crystal Growth and Electrical Characterization of InSbN Grown by Metalorganic Vapor Phase Epitaxy
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Crystal Growth and Electrical Characterization of InSbN Grown by Metalorganic Vapor Phase Epitaxy T. Ishiguro, Y. Kobori, Y. Nagawa, Y. Iwamura, and S. Yamaguchi, Department of Electrical, Electronic and Information Engineering, Kanagawa University, 3-27-1 Rokkakubashi, Kanagawa-ku, Yokohama, 221-8686, Japan Abstract InSb1-xNx was grown on GaAs substrate by low-pressure metalorganic vapor phase epitaxy. Carrier gases were hydrogen or the mix of hydrogen and nitrogen. In both cases, X-ray analysis demonstrated that nitrogen was incorporated into InSb1-xNx up to 0.24. Introduction It is well known that electron mobility of InSb is the highest among all III-V compounds semiconductors including GaN-based III-nitride semiconductors. To make use of such advantage in terms of a high-speed device, the problem of a large lattice-mismatch between InSb and GaAs has to be overcome. It has been reported that the lattice-mismatch of 14% between InSb and GaAs has a significant effect on the electrical properties of InSb film grown on GaAs substrate mainly because defects such as misfit dislocations generate in the interface [1]. In terms of the improvement of the electrical properties of InSb hetero-epitaxial films, we have focused on the crystal growth of InSb1-xNx from the standpoint of controlling the strain between GaAs and InSb1-xNx, which can be lattice-matched to GaAs. In fact, InSb0.44N0.56 is lattice-matched to GaAs. Experiment In this study, InSb1-xNx films with a thickness of about 0.5 µm were grown on (001) GaAs substrates by the low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). We used Trimethylantimony (TMSb) and Trimethylindium (TMIn) as Ⅲ -family sources, Dimethylhydrazine (DMHy) as Ⅴ-family ones, and H2, H2+N2 (1:1) as carrier gases. The flow rate of TMSb, TMIn and DMHy were set to be 20, 10 and 20 sccm, respectively. The pressure in the reactor was set to be 100 Torr. The growth temperature was ranged from 400 to 500 oC. Table 1 shows the growth conditions. Structural characterization was performed by the 2θ/ω scan of X-ray diffraction analysis, and electrical properties were characterized by Hall measurement.
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Table.1 Growth conditions. Growth temperature [℃] Pressure [Torr] Thickness [μm] Flow rate [sccm] : TMIn : TMSb : DMHy Ⅴ/Ⅲ
350 - 500 100 0.5 10 20 20 235.2
Results and discussion X-ray diffraction spectra for the samples grown using hydrogen as a carrier gas is shown in Fig.1. A peak located at 2θ=56.79° corresponds to lattice constant c (=6.479 Å) of (004) InSb. With increasing N content, as shown in Figs.1b), 1c) and 1d), two peaks emerged, which originate from cubic InSb1-xNx. Since InSb and InN are difficult to be miscible with each other, the two peaks are considered to be produced by the difference in the content of N. Thus the peak in the higher angle is due to InSb1-xNx with larger N content, and the peak in the lower angle is due to that with smaller N content. With decreasing the growth temperature, both of the two peaks were shifted to the higher angle, reflecting th
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