GalnN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
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GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy A. Sohmer, J. Off, H. Bolay, V. Härle, V. Syganow, Jin Seo Im, V. Wagner, F. Adler, Andreas Hangleiter, A. Dörnen, Ferdinand Scholz, D. Brunner, O. Ambacher and H. Lakner MRS Internet Journal of Nitride Semiconductor Research / Volume 2 / January 1997 DOI: 10.1557/S109257830000140X, Published online: 13 June 2014
Link to this article: http://journals.cambridge.org/abstract_S109257830000140X How to cite this article: A. Sohmer, J. Off, H. Bolay, V. Härle, V. Syganow, Jin Seo Im, V. Wagner, F. Adler, Andreas Hangleiter, A. Dörnen, Ferdinand Scholz, D. Brunner, O. Ambacher and H. Lakner (1997). GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy . MRS Internet Journal of Nitride Semiconductor Research, 2, pp e14 doi:10.1557/ S109257830000140X Request Permissions : Click here
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M R S
Internet Journal o f
Nitride S emiconductor Research
Volume 2, Article 14
GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy A. Sohmer, J. Off, H. Bolay, V. Härle, V. Syganow, Jin Seo Im, V. Wagner, F. Adler, Andreas Hangleiter , A. Dörnen, Ferdinand Scholz 4. Physikalisches Institut, Universität Stuttgart D. Brunner, O. Ambacher Walter Schottky Institut, Technische Universität München H. Lakner Werkstoffe der Elektrotechnik, Gerhard-Mercator-Universität Duisburg This invited article was received on May 7, 1997 and accepted on July 22, 1997.
Abstract The dependence of the In-incorporation efficiency and the optical properties of MOVPE-grown GaInN/GaN-heterostructures on various growth parameters has been investigated. A significant improvement of the In-incorporation rate could be obtained by increasing the growth rate and reducing the H2-partial pressure in the MOVPE reactor. However, GaInN layers with a high In-content typically show an additional low energy photoluminescence peak, whose distance to the band-edge increases with increasing In-content. For GaInN/GaN quantum wells with an In-content of approximately 12%, an increase of the well thickness is accompanied by a significant line broadening and a large increase of the Stokes shift between the emission peak and the band edge determined by photothermal deflection spectroscopy. With a further increase of the thickness of the GaInN layer, a second GaInN-correlated emission peak emerges. To elucidate the nature of these optical transitions, power-dependent as well as time-resolved photoluminescence measurements have been performed and compared to the results of scanning transmission electron microscopy.
1. Introduction The past several years have witnessed a rapid development in the growth of group III nitrides by metalorganic vapor phase epitaxy (MOVPE), that eventually
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