Damage, Strain and Quantum Confinement Issues in Dry Etched Semiconductor Nanostructures
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CdTe/Cdo. 875Mno.1 25Te sample consists of four quantum wells in series with well width of 2nm, 5nm, 8nm and 15nm, respectively, and capped and separated by 200nm of CdO.875 MnO.125Te barriers grown on 100im CdTe buffer layer on (100) InSb substrate at Ts
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