Deep reactive ion etching of silicon using non-ICP-based equipment
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Deep reactive ion etching of silicon using non‑ICP‑based equipment Zaifa Du1 · Junyang Nie2,3,4 · Dianlun Li2,3 · Weiling Guo1 · Qun Yan2,3 · Le Wang1 · Tailiang Guo2,3 · Jie Sun2,3 Received: 17 April 2020 / Accepted: 15 June 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract Deep reactive ion etching (DRIE) technology is one of the most important technologies in the processing of microelectronic devices and microelectromechanical system. As a necessary process in semiconductor integration, it has been widely studied in the past decades. It is known that the traditional DRIE process typically uses a plasma etching reactor equipped with inductively coupled plasma (ICP) sources to generate a high-density plasma so as to achieve high aspect ratio trenches with relatively small roughness. A cryogenic temperature control unit is typically employed as well. Here, however, we use a parallel plate RIE with rather simple structure, which is not usually used for DRIE, to obtain high aspect ratio silicon etching. With no ICP sources and no sophisticated temperature control unit, the system and experiment are now much more cost effective. Through the optimization of the processing, the etching rate of silicon can reach 440 nm/min. Finally, a 45 μm deep trench is etched in silicon with good perpendicularity. This method will greatly reduce the equipment related cost, especially for those applications that do not have extremely stringent requirement on the final etching accuracy. Keywords Deep reactive ion etching · Silicon · Etching rate · Inductively coupled plasma
1 Introduction At present, microelectronic and optoelectronic devices are aggressively becoming smaller and more precise. For many devices, their sizes can be as small as micro- or even nanoscale. To etch and fabricate patterns in those devices on electronic chips, it seems inevitable to apply advanced etching Zaifa Du and Junyang Nie contributed equally. * Jie Sun [email protected] Weiling Guo [email protected] 1
Laboratory of Optoelectronic Technology, Beijing University of Technology, Beijing 100124, China
2
National and Local Joint Engineering Laboratory for Flat Panel Display Technology, Fuzhou University, and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
3
Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
4
Faculty of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China
technology. Wet etching technology, in the case of difficult control accuracy, would easily cause damages to the device structures and fail to meet the expected requirements, which makes the alternative dry etching particularly important in the fabrication of micro- and nanodevice structures. Reactive ion etching (RIE) has good selectivity, clear anisotropy and good controllability of etching precision, which makes it widely used in microelectronics and optoelectronics processing [1–
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