Defects Behavior in Disordered Iron Oxide Synthesized from Grain-Oriented Iron Foils
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MRS Advances © 2019 Materials Research Society DOI: 10.1557/adv.2019.35
Defects Behavior in Disordered Iron Oxide Synthesized from Grain-Oriented Iron Foils Karen A. Neri1, José A. Andraca2, Ramón Peña3, Roberto Baca4 1 Doctorate in Nanoscience and Micro-Nanotechnology, Escuela Superior de Ciencias Biológicas (ENCB), Instituto Politécnico Nacional, Mexico City, México. E-mail: [email protected]. 2
Unidad Profesional Interdisciplinaria de Ingeniería Campus Hidalgo (UPIIH), Instituto Politécnico Nacional, Pachuca, Hidalgo, México.
3 Department of Electrical Engineering, Solid State Electronics Section, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Mexico City, México. 4 Department of Electronics, Escuela Superior de Ingeniería Mecánica y Eléctrica (ESIME), Instituto Politécnico Nacional, Mexico City, México.
ABSTRACT: Disordered iron oxide thin-films synthesized from grain-oriented iron foils were grown on both glass and Si (100) n-type substrates by vacuum evaporation followed by thermal oxidation at low temperatures. Defects such as vacancies formation has been studied using Atomic Force Microscopy (AFM) and Raman Spectroscopy. The kinetic of oxidation as a function of surface parameters was investigated by AFM studies. The vibrational modes (bands) connected with the vacancies formation and magnetic ordering into the iron oxide structure were validated by Raman spectroscopy. Space-charge effects can be influenced by discontinuous growth of iron oxide and correlated with their structure parameters. Finally, the disordered iron oxide will be useful for the next generation of adaptive oxide devices.
INTRODUCTION Transition Metal Oxide (TMO) materials are crucial to the electronics industry and development. It has been found that because of its lattice, spin, orbit and the electron’s charge, can combine to exhibit several properties of electronic, magnetic and optical conditions like: superconductivity, semiconducting, insulating, ferroelectric, piezoelectric, ferromagnetic, multiferroic and so on; and can enhance the performance of an electronic device [1-4]. From TMOs, a new area of electronics is emerging for the creation of systems that can adapt to different inputs. These systems are known as adaptive oxide electronics, and had shown that properties like resistivity, polarization and magnetization, can be modified electrically into a non-volatile form and resemble the behavior of a neural synapse [5, 6].
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Iron oxides have been of great interest in due to their properties of their different phases and their possible interconversions between them at different temperatures [7, 8]. For the temperatures reported in this work, two phases are expected: hematite (α-Fe2O3) and magnetite (Fe3O4) [9]. The hematite (α-Fe2O3), cry
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