Design, Synthesis and Characterization of Precursors for Chemical Vapor Deposition of Oxide-Based Electronic Materials
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possess sufficient vapor phase integrity
to permit their evaluation as
CVD
precursors. These, and related, results are presented herein. INTRODUCTION One of the greatest challenges in materials chemistry is to close the loop between evaluation of final device performance and the design of precursors, which enter into processes, utilized in device manufacture. This Holy Grail of "post-mortem" detection of failure devices, and its integration into the "pre-embryonic" design of molecular precursors, has attracted substantial interest from researchers in recent years. As shown in Figure 1, it is incumbent on researchers in the area of precursor development to take a broad view of what are considered as inputs and outputs to the overall area of precursor design. Frequently, it is viewed that the singular input is design and the only output is a CVD precursor. Design includes the components of cost, technical specifications, equipment limits, and process parameters, each of which must be independently considered and weighed against one another in decisions regarding precursor design. The output is not only the compound itself, but also additionally equipment, and process recommendations to accompany all chemistries, which have been developed. In this vein, one may have discovered a compound which is not amenable to delivery by traditional (vapor phase) modes. An example of this is the emergence of liquid delivery systems to accommodate precursors, which are not useable in processes relying exclusively on traditional .vapor delivery schemes.
Mat. Res. Soc:. Syrnp. Proc. Vol. 606 © 2000 Materials Research Society
INPUT
OUTPUT
Cost "C***ý
cVD Precursors
Technical ___ Specifications 's
Equipment Limits
PRECURSOR DE.VE-LOPM,-NT D
O
T
Process Parameters
Equipment Recommendations m a
Process Recommendations
Figure 1: Inputs and Outputs for MOCVD precursors. This manuscript follows the two themes of design and characterization in the following sections. DESIGN Statement of the Challenge Many desired dielectric, insulating, and other electronic materials contain elements residing in groups 1-5 of the periodic chart. The heaviest representatives among these elements have the smallest known charge/size ratio among the entire periodic chart. Thus, this problem is among the most difficult for a coordination chemist to tackle. Additionally, there are substantial chemistry knowledge gaps present in these s block and early d block transition elements. Therefore, the wide pyramid base which was present in p block chemistry, and contributed to the early development of alternative precursors in III-V compound semiconductors, is absent in this region. Furthermore, organometallic chemistry (which is known for the early transition elements) is often not directly applicable to the growth of metal oxides, which are necessary for most modem electronic materials. Therefore, substantial basic research effort must be invested to compensate for these fundamental chemistry knowledge gaps among the elements, which are vital to the pr
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