Determination of the barrier height of iridium with hydrogen-terminated single crystal diamond
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Research Letter
Determination of the barrier height of iridium with hydrogen-terminated single crystal diamond Yan-Feng Wang, Wei Wang, Xiaohui Chang, Juan Wang, Jiao Fu, Tianfei Zhu, Zongchen Liu, Yan Liang, Dan Zhao, Zhangcheng Liu, and Minghui Zhang, Institute of Wide Band Gap Semiconductors, Shaanxi Key Lab of Information Photonic Technique, Xi’an Jiaotong University, Xi’an 710049, Shaanxi Province, China Kaiyue Wang, Institute of Wide Band Gap Semiconductors, Shaanxi Key Lab of Information Photonic Technique, Xi’an Jiaotong University, Xi’an 710049, Shaanxi Province, China; School of Materials Science and Engineering, Taiyuan University of Science and Technology, Taiyuan 030024, Shanxi Province, China Hong-Xing Wang, and Ruozheng Wang, Institute of Wide Band Gap Semiconductors, Shaanxi Key Lab of Information Photonic Technique, Xi’an Jiaotong University, Xi’an 710049, Shaanxi Province, China Address all correspondence to Hong-Xing Wang at [email protected] (Received 3 January 2019; accepted 30 January 2019)
Abstract Direct determination of barrier height (ΦBH) value between Ir and single crystal (001) hydrogen-terminated diamond with lightly boron doped has been performed using x-ray photoelectron spectroscopy technique. 70 nm Ir islands were formed on hydrogen-terminated diamond surface using anodic aluminum oxide. The ΦBH value for Ir/hydrogen-terminated diamond was −0.43 ± 0.14 eV, indicating that Ir was a suitable metal for ohmic contact with hydrogen-terminated diamond. The band diagram of Ir/hydrogen-terminated diamond was obtained. The experimental ΦBH was compared with the theoretical ΦBH in this work.
Introduction Diamond exhibits many outstanding intrinsic properties, such as wide band gap (5.47 eV), high breakdown voltage field (10 MV/cm), high thermal conductivity (22 W/cm K), high carrier mobilities (3800 cm2/V s for holes; 4500 cm2/V s for electrons), larger carrier saturation velocity (1.05 × 107 cm/s for holes; 1.5 × 107 cm/s for electrons) etc., making it having potential applications in the field of electronic devices which can work in high frequency, high power, and high temperature.[1–10] When single crystal diamond is treated by hydrogen plasma, carbon–hydrogen (C–H) bonds will be produced on the diamond surface. Because of C–H bonds and negatively charged adsorbates on diamond surface, a two-dimensional hole gas layer will be formed below the diamond surface, resulting in a p-type conduction layer with 1013 /cm2 sheet carrier density and 50–150 cm2/V/s carrier mobility.[4–6,11] By now, hydrogenterminated diamond (H-diamond) is widely used to fabricate electronic devices. To enhance the performance of H-diamond-based electronic devices, an excellent ohmic contact between metal and H-diamond is necessary.[12–15] Recently, our group reported ohmic contact between Ir and H-diamond. A low specific contact resistivity (2.9 × 10−6 Ω cm2) and contact resistivity (1.27 Ω mm) between Ir and H-diamond was obtained by a transmission line model.[4] However, it is still not clear about the ΦBH v
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