Development of CdMnTe thin films using electroplating technique for opto-electronic device applications
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Development of CdMnTe thin films using electroplating technique for opto-electronic device applications O. I. Olusola1,2,*
, M. L. Madugu1,3, A. A. Ojo1,4, and I. M. Dharmadasa1
1
Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S11WB, UK 2 Department of Physics, School of Sciences, The Federal University of Technology, P.M.B. 704, Akure, Nigeria 3 Department of Physics, Faculty of Science, Gombe State University, P.M.B. 127, Gombe, Nigeria 4 Department of Mechanical Engineering, Faculty of Engineering, Ekiti State University, P.M.B. 5363, Ado Ekiti, Nigeria
Received: 27 July 2020
ABSTRACT
Accepted: 18 October 2020
Cathodic electrodeposition technique has been successfully used to achieve the growth of polycrystalline CdMnTe ternary compound thin films at different cathodic potentials. The choice of various cathodic potentials used in this work was made from the cyclic voltammogram results. The CdMnTe thin films were electroplated from electrolytes containing CdSO4, TeO2 and MnSO4H2O in an acidic aqueous medium. The electrodeposition was carried out on glass/fluorine-doped tin oxide {FTO} substrates. The structural, optical, morphological and electrical properties of the CdMnTe thin films were studied using X-ray diffraction (XRD), UV–Vis spectroscopy, scanning electron microscopy (SEM), current–voltage (I–V) characteristics and photo-electro-chemical (PEC) cell measurements respectively. The materials investigated in this work were explored under three different conditions namely: as-deposited (AD), heattreated ordinarily in air (HT) and heat-treated in air in the presence of CdCl2 surface treatment (CC). Results from the XRD showed that the electrodeposited films are polycrystalline with the presence of CdTexOy and CdMnTe peaks. The electroplated films have cubic crystal structures and the preferred orientation was found to be along the (111) plane. The optical energy bandgaps of the thin films were found to be deposition potential dependent. Electrical conductivity types namely p- and n-type conductivity were also obtained at different cathodic potentials using photo-electro-chemical cell measurement technique for as-deposited and heat-treated materials.
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Springer Science+Business
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https://doi.org/10.1007/s10854-020-04717-5
J Mater Sci: Mater Electron
1 Introduction CdMnTe is a ternary compound semiconductor which is most often referred to as diluted magnetic semiconductor. The magnetic properties arise from the paramagnetic nature of manganese metal and their common ions. CdMnTe finds numerous applications in the field of radiation detection [1–3], magnetic diodes for photo-capacitance application [4], and for photo-voltaic device application [5]. Researchers have proven that CdMnTe thin films possess tunable bandgaps ranging from 1.70 to 2.20 eV [2]. The bandgap tunability has been reported to be one of the advantages of CdMnTe
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