Development of CdTe on Si Heteroepilayers for Controlled PV Material and Device Studies
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Development of CdTe on Si Heteroepilayers for Controlled PV Material and Device Studies T.A. Gessert, R. Dhere, D. Kuciauskas, J. Moseley, H. Moutinho, M.J. Romero, M. Al-Jassim, E. Colegrove*, R. Kodama†, and S. Sivananthan* National Renewable Energy Laboratory, Golden, Colorado 80401 *University of Illinois at Chicago, Physics Department, Chicago, Illinois 60612 † EPIR Technologies, Bolingbrook, Illinois 60440 ABSTRACT The objective of the National Renewable Energy Laboratory’s (NREL) current three-year CdTe plan under the U.S. Department of Energy’s SunShot Initiative is to identify primary mechanisms that limit the open-circuit voltage and fill factor of polycrystalline CdTe photovoltaic (PV) devices, and develop CdTe synthesis processes and/or device designs that avoid these limitations. Part of this project relies on analysis of crystalline materials and pseudocrystalline CdTe layers where point and extended defects can be introduced sequentially without the complications of extensive impurities and grain boundaries that are typical of present polycrystalline films. The ultimate goals of the project include producing CdTe PV devices that demonstrate ≥20% conversion efficiency, while significantly improving our understanding of processes and materials capable of attaining cost goals of
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