Development of methods for calculating basic features of the nuclear contribution to single event upsets under the effec
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CLEI Theory
Development of Methods for Calculating Basic Features of the Nuclear Contribution to Single Event Upsets under the Effect of Protons of Moderately High Energy N. G. Chechenin* , T. V. Chuvilskaya, A. A. Shirokova, and A. G. Kadmenskii Skobeltsyn Institute of Nuclear Physics, Moscow State University, Moscow, 119991 Russia Received January 19, 2015; in final form, April 3, 2015
Abstract—As a continuation and a development of previous studies of our group that were devoted to the investigation of nuclear reactions induced by protons of moderately high energy (between 10 and 400 MeV) in silicon, aluminum, and tungsten atoms, the results obtained by exploring nuclear reactions on atoms of copper, which is among the most important components in materials for contact pads and pathways in modern and future ultralarge-scale integration circuits, especially in three-dimensional topology, are reported in the present article. The nuclear reactions in question lead to the formation of the mass and charge spectra of recoil nuclei ranging from heavy target nuclei down to helium and hydrogen. The kineticenergy spectra of reaction products are calculated. The results of the calculations based on the procedure developed by our group are compared with the results of calculations and experiments performed by other authors. DOI: 10.1134/S106377881506006X
1. INTRODUCTION A realistic prognosis of the performance capability of the onboard electronics under conditions of space radiation environment is one of the most important tasks in designing space vehicles and in improving their shielding against radiation. At the present time, the prognosis quality is adversely affected by uncertainties associated with the deficiency of relevant experimental data and ambiguities in the parameters of models that are used to estimate probabilities for radiative effects. It is well known that radiative effects lead either to a restorable single event upset or to unrestorable upsets, such as zapping of powerful field-effect transistors, breakdown of gate dielectrics, and latch-up effects in integration circuits [1, 2]. Single upsets are due primarily to the production and subsequent separation of electron–hole pairs either in the process of the ionization loss of primary cosmic-ray particles or in the process of the ionization loss of secondary particles arising as products of the elastic scattering of primary particles and nuclear reactions induced by them. Nuclear reactions induced by such particles (protons) produce recoil nuclei and other heavy fragments, for which the ionization loss is high (so-called linear energy transfer). In that case, the uncertainty in forecasting single event upsets caused by nuclear-reaction products *
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stems largely from insufficient knowledge of cross sections for various channels of nuclear reactions and kinetic-energy spectra of their products. In earlier studies of our group that were reported in [3–6], we explored special features of silicon, aluminum, and tungsten fragmentation induce
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