Development of ZnO nanostructure film for pH sensing application
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Development of ZnO nanostructure film for pH sensing application Prashant Sharma1,2 · Vijendra Singh Bhati4 · Mahesh Kumar5 · Rishi Sharma2,3 · Ravindra Mukhiya2,3 · Kamlendra Awasthi1 · Manoj Kumar1 Received: 17 December 2019 / Accepted: 12 March 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract Nanostructured zinc oxide sensing film was deposited on the Si/SiO2/Pt substrate by the RF magnetron sputtering process. The film was characterized by FESEM (field-emission scanning electron microscope) and XRD (X-ray diffraction) for their morphology and structural analysis. The FESEM results show that the film morphology is in nanophase with an average nanostructure size of ~ 50 nm. XRD results show that the film is polycrystalline. The AFM (atomic force microscopy) and Raman spectroscopy were done to analyze the surface roughness and the structural properties of the film, respectively. FTIR (Fourier-transform infrared spectroscopy) was used to analyze the presence of ZnO. Further, the ZnO nanostructure film has been explored for pH sensing for pH (4–12). The sensitivity of the film was found to be 31.81 mV/pH. The drift characteristics of the film were also done to find out the stability of the film. Keywords pH sensor · EGFET · Sensitivity · ZnO
1 Introduction Monitoring of pH is very significant for many applications like blood pH monitoring, biological and chemical analyses, wastewater monitoring, clinical detection and many industrial applications [1–3]. Most of the pH sensors available in the market are costly, large size, bulky and hence not suitable for various biological applications. As a substitute for a glass electrode-based pH sensor, Bergveld in 1970 fabricated the ion-sensitive field-effect transistor (ISFET) [4]. The ion-sensitive field-effect transistor is quite similar to the * Prashant Sharma [email protected] * Manoj Kumar [email protected] 1
Department of Physics, Malaviya National Institute of Technology Jaipur, Jaipur, Rajasthan 302017, India
2
CSIR-Central Electronics Engineering Research Institute (CEERI), Pilani, Rajasthan 333031, India
3
Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, Uttar Pradesh 201002, India
4
Department of Physics, Indian Institute of Technology Jodhpur, Jodhpur, Rajasthan 342017, India
5
Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur, Rajasthan 342017, India
metal–oxide–semiconductor field-effect transistor (MOSFET) with the only difference is that ISFET does not have a metal gate electrode. However, this ISFET gets affected by the chemical impurities that are present in the solution. This impurity can damage the FET as the whole device is dipped in the solution. To overcome the problem, Spiegel et al. designed and developed an alternative improved version of ISFET sensors, i.e., EGFET (Extended-Gate Field-Effect Transistor) [5]. The extended-gate field-effect transistor (EGFET), which works on the principle of ISFET, divides the original ISFET into two parts:
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