Diffusion Lengths in a-SiGe:H and a-SiC:H Alloys from Optical Grating Technique

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DIFFUSION LENGTHS IN a-SiGe:H AND a-SiC:H ALLOYS FROM OPTICAL GRATING TECHNIQUE G.H. BAUER, C.E.NEBEL, H.-D. MOHRING Institut fuer Physikalische Elektronik, Universitaet Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, F.R. Germany ABSTRACT Ambipolar diffusion lengths in a-SiGe:H and a-SiC:H have been analyzed by Steady State Photocarrier Grating Technique. Diffusion lengths and photoconductivity of a-Si:H are considerably affected by alloying. Photoconductivity in a-SiGe:H can be improved by special deposition methods, diffusion lengths, however turn out to remain nearly unchanged. The comparison of diffusion lengths and -ho~oconductivity yields hole mobilities in a-Sil.xGex:H of 10 cm /Vs for O

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