Tuning series resistance in Au/Alq3/n-Si diodes with high-energy e-Beam irradiation
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Tuning series resistance in Au/Alq3/n-Si diodes with high-energy e-Beam irradiation U. Aydemir1 · M. Durmuş1 Received: 29 November 2019 / Revised: 21 January 2020 / Accepted: 23 January 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract The main concern of the present study is to improve the performance of Au/Alq3/n-Si diode with the help of a high-energy electron beam (e-Beam) irradiation. Before the production of Au/Alq3/n-Si, the structural analysis was carried out by X-Ray diffraction (XRD) to ensure that the radiation-induced structural deformation does not occur on the Alq3 powders. After vacuum deposition of Alq3 thin films, Fourier transfrom infrared (FTIR) measurements were also carried out. The current-voltage characteristics of Au/Alq3/n-Si diodes with Alq3 interfacial layer unirradiated (D1-pristine) and irradiated with 30 kGy (D2) and 100 kGy (D3) were discussed in detail. To analyze the effect of ionizing radiation on the produced diodes, we calculated the barrier height (ΦBo), ideality factor (n), shunt resistance (Rsh), and series resistance (Rs) by using these experimental data. It was observed that the electrical characteristics of Au/Alq3/n-Si diodes, for D1, D2, and D3, were highly influenced by the irradiation, and the device performance could be improved with the appropriate irradiation dose. Moreover, we achieved the series resistance tuning of Au/Alq3/n-Si diodes by irradiating Alq3 powders with high-energy e-Beam without intentional chemical doping of organic interfacial layer as a novel. This study has the potential to be a helpful guide for researchers who design and perform analysis of such devices.
1 Introduction Metal/organic/semiconductor (MOrS) diodes are extensively researched and used due to their low cost, fast frequency response, and high switching speeds. MOrSs are willing to challenge conventional metal/insulator/semiconductor (MIS) or metal/oxide/semiconductor (MOS) diodes with inorganic interfacial layers. The primary motivation of the researchers is that MOrS-based devices have a great potential such as solar cells, gas sensors, photodiodes, light-emitting diodes, and transistors as well [1–17]. Therefore, the researchers tend to develop a new class of MOrS diodes with interfacial layer by using different organic molecules [1–5], doping organics with metal salts [6, 7], or composing organics with oxides [8–11], chalcogens [12–14], and graphene [15–17]. The purpose of these studies was to improve conventional device performance drastically. Hence, the metal–semiconductor diodes were successfully modified by using the materials mentioned above as an interfacial layer. * U. Aydemir [email protected] 1
Department of Electrical and Electronics Engineering, Uludağ University, 16120 Bursa, Turkey
ln the last two decades, Alq3 continued to be a widely used material in intense research and development in organic electronics. In early studies, it was used as the material for electron transport layer and as the host for the emitter laye
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