Diffusion of Hydrogen in 6H Silicon Carbide
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incorporation of dopants for both p-type and n-type layers can be well controlled, which results in increased doping range and reproducibility[3]. During CVD growth of SiC films H2 is normally employed as the carrier gas and hydrogen is anticipated to be incorporated in the SiC film at concentrations exceeding the solubility limit (supersaturation) at the growth temperature. The properties of hydrogen in crystalline semiconductors have been the subject of numerous investigations and for an extensive review, see ref.[4]. Technologically, the principal interest in hydrogen occurs because of its ability to passivate shallow acceptor and donor impurities as well as deep level defects in the two most commonly used semiconductors, Si and GaAs. A similar effect may also be anticipated in SiC, and indeed, this has recently been confirmed by experimental results from different groups[3,5]; in particular, a strong interaction between hydrogen and p-type dopants (B and Al) is revealed. In order to control the influence of hydrogen, a key issue is the mobility. Because of its pronounced tendency to interact with, and be trapped by, other impurities/defects and to occur in different states (ionic, atomic, molecular), hydrogen is expected to display a complex diffusion behaviour, as has been observed in Si[4]. In this contribution, we have studied the diffusion of hydrogen in 6H SiC samples implanted with 50 keV H+ ions to doses of
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