Domains in Ferroic Crystals and Thin Films
Domains in Ferroic Crystals and Thin Films presents experimental findings and theoretical understanding of ferroic (non-magnetic) domains developed during the past 60 years. It addresses the situation by looking specifically at bulk crystal
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Domains in Ferroic Crystals and Thin Films
Alexander K. Tagantsev Jan Fousek
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L. Eric Cross
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Domains in Ferroic Crystals and Thin Films
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Alexander K. Tagantsev LC IMX STI Station 12 1015 Lausanne EPFL Switzerland [email protected]
L. Eric Cross Department of Electrical Engineering Pennsylvania State University University Park PA 16802 USA [email protected]
Jan Fousek Department of Physics Technical University of Liberec Halkova 6 461 17 Liberec 1 Czech Republic
ISBN 978-1-4419-1416-3 e-ISBN 978-1-4419-1417-0 DOI 10.1007/978-1-4419-1417-0 Springer New York Dordrecht Heidelberg London Library of Congress Control Number: 2009940898 # Springer ScienceþBusiness Media, LLC 2010 All rights reserved. This work may not be translated or copied in whole or in part without the written permission of the publisher (Springer ScienceþBusiness Media, LLC, 233 Spring Street, New York, NY 10013, USA), except for brief excerpts in connection with reviews or scholarly analysis. Use in connection with any form of information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed is forbidden. The use in this publication of trade names, trademarks, service marks, and similar terms, even if they are not identified as such, is not to be taken as an expression of opinion as to whether or not they are subject to proprietary rights. Printed on acid-free paper Springer is part of Springer ScienceþBusiness Media (www.springer.com)
Preface
With much excitement and great enthusiasm I introduce this thorough treatise on the major aspects of domain and domain wall phenomena in ferroics, mostly ferroelectrics, a major achievement for which there has been a long-standing need. Ferroelectric materials possess spontaneous electrical polarization which is stable in more than one orientation and can be reoriented (switched) by an applied electric field. This property and its typical derivative characteristics, e.g., high piezoelectric response and large permittivity, make ferroelectrics exceedingly useful in diverse applications such as non-volatile memories, ultrasonic medical imaging, micro-electromechanical systems, and reconfigurable high-frequency electronics. Typically, a ferroelectric material is divided into domains, which are regions in the material that are polarized in one of the symmetry-permitted polarization directions. The interfaces between adjacent domains, the domain walls, have a typical thickness of 1–2 unit cells. The behaviors of domains and domain walls are fundamental to ferroelectrics and dominate their properties: poling of ferroelectric ceramics, namely electrical aligning of the polar direction of ferroelectric domains, is essential for piezoelectric activity; periodically poled crystals are used as nonlinear optic materials for which the width of the inverted domains controls the desired wavelength of operation. The high permittivity of ferroelectrics widely used in capac
