• PDF / 243,401 Bytes
• 6 Pages / 612 x 792 pts (letter) Page_size
• 84 Downloads / 216 Views

DOWNLOAD

REPORT

Doping of amorphous and microcrystalline silicon films by hot-wire CVD and RFPECVD at low substrate temperatures on plastic substrates P. Alpuim1, V. Chu1, J.P. Conde2 1 Instituto de Engenharia de Sistemas e Computadores (INESC), Rua Alves Redol, 9, 1000-029 Lisbon, Portugal 2 Department of Materials Engineering, Instituto Superior Técnico, Av. Rovisco Pais, 1049-001 Lisbon, Portugal ABSTRACT Deposition of n and p-type amorphous (a-Si:H) and microcrystalline (µc-Si:H) silicon thin films on polyethylene terephthalate (PET) at substrate temperatures (Tsub) of 100ºC and 25ºC (RT) prepared by hot-wire (HW) chemical vapor deposition and radio-frequency (RF) plasma-enhanced chemical vapor deposition is studied as a function of hydrogen dilution. Doping is achieved by addition of phosphine (ntype) and diborane (p-type) to the gas phase reactive mixture. At Tsub=100ºC, n-type a-Si:H is obtained by HW with dark conductivity σd>10-4 Ω−1cm-1 and by RF with σd~10-3 Ω−1cm-1. P-type a-Si:H is obtained by HW with σd=8×10-7 Ω−1cm-1 and by RF with σd=6×10-7 Ω−1cm-1. Decreasing the temperature of deposition to 25ºC decreases the σd of RF n-type amorphous samples to 5×10-5 Ω−1cm-1 but the σd of p-type samples remains unchanged. RT HW a-Si:H films show a decrease of σd both for ntype film (σd=4×10-6 Ω−1cm-1) and p-type film (σd=1.2×10-7 Ω−1cm-1). N-type µc-Si:H was obtained by HW with σd=7×10-2 Ω−1cm-1 and by RF with σd>10-2 Ω−1cm-1 at 100ºC. Using the same Tsub, p-type µcSi:H was deposited by HW and by RF with σd~0.5 Ω−1cm-1. At RT, only p-type µc-Si:H films could be prepared using HW (σd~1 Ω−1cm-1) and RF (σd=4×10-3 Ω−1cm-1). The structural properties of the films were studied using Raman spectroscopy. The structural and transport properties were correlated. INTRODUCTION Deposition of amorphous (a-Si:H) and microcrystalline (µc-Si:H) silicon thin films at very low (

Recommend Documents

Structural and optoelectronic properties of amorphous and microcrystalline silicon deposited at low substrate temperatur

175 85 404KB

Effects on Selective CVD of Titanium Disilicide by Substrate Doping and Selective Silicon Deposition

179 21 662KB

Amorphous and Microcrystalline Silicon

219 96 75MB

Structural Changes in Amorphous Silicon Annealed at Low Temperatures

204 61 149KB

Deposition of Amorphous Hydrogenated Silicon Films by VUV Laser CVD: Influence of Substrate Temperature

208 44 316KB

Tailoring the Structure of Low-Temperature-Deposited Microcrystalline Silicon Films by Biasing the Substrate

253 55 66KB

Deposition of Polysilicon Films by Hot-Wire CVD at Low Temperatures for Photovoltaic Applications

172 49 402KB

Laser Doping and Crystallization of Amorphous Silicon Thin Films

200 53 3MB

Properties of Nanocrystalline 3C-SiC:H and SiC:Ge:H Films Deposited at Low Substrate Temperatures

164 15 261KB

Growth of Polycrystalline Silicon Films at Low Temperature by Remote Plasma CVD

242 62 284KB

Amorphous and Microcrystalline Silicon-based Photovoltaic

215 54 139KB

Substrate temperature: A critical parameter for the growth of microcrystalline silicon-carbon alloy thin films at low po

143 59 150KB