Doping of Two-Dimensional Semiconductors: A Rapid Review and Outlook
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MRS Advances © 2019 Materials Research Society DOI: 10.1557/adv.2019.391
Doping of Two-Dimensional Semiconductors: A Rapid Review and Outlook Kehao Zhang 1, Joshua Robinson1, 2, 3 1
Department of Materials Science and Engineering and Center for Two Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802 USA
2
Center for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, PA 16802 USA 3 2-Dimensional Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, PA 16802 USA
ABSTRACT Doping, as a primary technique to modify semiconductor transport, has achieved tremendous success in the past decades. For example, boron and phosphorus doping of Si modulates the dominant carrier type between p-type and n-type, serving as the backbone for the modern microelectronic technologies. Doped III-V semiconducting systems exhibit phenomenal optoelectronic properties. Magnesium doped gallium nitride plays an important role to build efficient blue light-emitting diode (LED), which won Nobel Prize in physics in 2014. The rise of two-dimensional (2D) materials sheds light on their potential in next generation electronic, optoelectronic, and quantum applications. These properties can further be controlled via doping of 2D materials, however, many challenges still remain in this field. Here, we present a rapid review on the recent achievements and challenges in the metastable and substitutional doping of 2D materials, followed by providing an outlook on integrating 2D materials into more advanced electronic architectures.
INTRODUCTION Conventional semiconductor technology utilizes the substitution of foreign atoms in an atomic lattice matrix to modulate the carrier concentration of semiconductors. A textbook example of doping in this manner is boron (B) and phosphorus (P) incorporation in a silicon (Si) matrix, thereby tuning the carrier type to hole (p-type) and electrons (n-type), respectively.[1] The same concept applies in 2D semiconductors, which shows tremendous potential in the next generation electronic,
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optoelectronic and quantum applications.[2–9] Foreign atoms can substitute into the atoms lattice permanently changing the optical, electrical and magnetic properties.[10] For example, niobium (Nb) substitution of molybdenum (Mo) atoms in molybdenum disulfide (MoS2) leads the p-type transport behavior, while “natural” MoS2 shows n-type behavior.[11–13] Beyond traditional substitutional doping, metastable doping plays a significant role in 2D semiconductors as well due to their atomically-thin nature (< 1 nm). Metastable doping relies on charge transfer between the environment (e.g. ambient, surface molecules, dielectric overlayers, substrates) and the 2D la
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