Dynistors with a Subnanosecond Switching Time
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Dynistors with a Subnanosecond Switching Time S. V. Korotkova,*, Yu. V. Aristova, A. L. Zhmodikova, and D. A. Korotkova a Ioffe
Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia *e-mail: [email protected]
Received March 19, 2020; revised April 2, 2020; accepted April 3, 2020
Abstract—The results of experimental studies of optimized shock-ionized dynistors (SIDs) when switching high-power current pulses with a nanosecond duration are presented. It is shown that the efficiency of the SID switching process can be increased by introducing uniformly distributed equal-sized diode sections, whose total area is significantly less than the total area of the semiconductor structure of the dynistor, into its four-layer structure. The results of comparative studies of optimized SIDs with different areas of structures and different maximum allowable voltages in the stationary state are presented. Explanations of the results are given. DOI: 10.1134/S0020441220050176
The high efficiency of modern laser, electromagnetic, and electric-discharge technologies is achieved by using powerful electrical pulses with nanosecond durations. Low energy losses during their formation can only be provided by switches with a subnanosecond time of switching to a well-conducting state. At the same time, semiconductor switches that are characterized by a long service life and a small spread of their actuation moments are the most promising devices. In this regard, studies [1–7, etc.] on the investigation of various four-layer silicon semiconductor devices that are switched within a time of at most 1 ns under the application of a high-voltage nanosecond pulse are of great interest. This switching method was first described in [8]. Its implementation requires that an increase in the triggering voltage at a rate of ~1 kV/ns be provided. Under these conditions, the duration of the triggering action is less than the time of development of a stationary breakdown of a semiconductor device and the electric-field strength in its structure can grow up to a value sufficient for initiating the shock-ionization process in silicon. The shock ionization determines the rapid generation of electron-hole plasma and the subnanosecond switching time to a well-conducting state. Rapid switching to a high-conductivity state provides unique capabilities for shock-ionization semiconductor devices when switching powerful nanosecond current pulses. The results of pilot studies of modified dynistors with shock ionization were presented in [9]. A specific feature of SIDs (shock-ionized dynistors) is the fact that small regions with n+- and p+-type conductivities (shunts) were introduced into the р+- and n+ emitters of their р+–n–p–n+ structures. These excluded the
possibility of blocking the reverse voltage, thus making it possible to minimize the thickness of the weakly doped n-layer, which determines the main switching energy losses. This paper presents the results of optimization of the SID design
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