Effect of an applied electric field during the oxidation process of zinc thin films on growth and properties of ZnO nano
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Effect of an applied electric field during the oxidation process of zinc thin films on growth and properties of ZnO nanorods Mehraban Jouya1 · Fahime Taromian1 · Mehdi Afshari Abolkarlou2 Received: 4 June 2020 / Accepted: 4 August 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract In recent years, metal oxide semiconductors have been one of the most remarkable subjects in science and technology. Present research investigates the growth and characterization of Zinc Oxide (ZnO) nanorods (NRs) as one of the metal oxide semiconductors with a broad range of applications. In this work, ZnO NRs preparation includes two steps. In the first step, Zn thin layers were deposited by thermal evaporation method on soda lime glass (SLG) substrate under an electric field of 134 kV/m. The second step contains the oxidation process of the Zn layers under electric fields of 0, 48 and 84 kV/m in air. Then, samples were characterized by X-ray Diffraction (XRD), Energy Dispersive X-ray Spectroscopy (EDX), Field Emission Scanning Electron Microscopy (FESEM), Raman and UV–Visible Spectroscopy. XRD study showed that all samples were crystallized in a hexagonal wurtzite crystal structure. EDX analysis showed that Zn and O atomic ratio, with a good approximation, are close to the ratio expected for ZnO (1:1). FESEM images illustrated that by applying the electric field, diameter of ZnO NRs decreased. Moreover, Raman spectra indicated a shift towards higher wavenumbers due to decreasing the crystallite size and vice versa. In addition, the results obtained from optical measurement demonstrated a reversed behavior of the samples’ band gap energy with crystallite size. Keywords Metal oxide semiconductor · ZnO nanorods · Electric field · Thermal evaporation · Oxidation process · Hexagonal wurtzite
1 Introduction Study of the metal oxide semiconductors is one of the most important subjects of science and technology, especially applications of metal oxide thin layers in electronic engineering [1, 2]. Among the various metal oxide semiconductors, Zinc oxide (ZnO), as an n-type semiconductor with a wide direct band gap of 3.37 eV, high exciton energy of 60 meV, and enhanced electron mobility, has gathered attention for a broad range of applications in photo-emission devices, gas sensors, photo-transistors and plasma display panels [3–7]. A lot of methods have been used to synthesize of ZnO films, including Molecular Beam Epitaxy (MBE) [8], RF magnetron sputtering [9], thermal decomposition * Mehdi Afshari Abolkarlou [email protected] 1
Department of Solid State Physics, Faculty of Physics, K. N. Toosi University of Technology, Tehran 15875‑4416, Iran
Faculty of Basic Sciences, University of Shahreza, Shahreza 86481‑41143, Iran
2
[10], sol–gel [11, 12], micro-emulsion [13], electrochemical process [14], chemical bath deposition [15], spray ultrasonic deposition [16], atomic layer deposition [17] and so on. However, for outstanding properties, only chemical vapor deposition (CVD) and physical vapor deposition (PV
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