Effect of Annealing Treatment on Performance of Ga 2 O 3 Conductive-Bridging Random-Access Memory
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https://doi.org/10.1007/s11664-020-08177-9 Ó 2020 The Minerals, Metals & Materials Society
INTERNATIONAL ELECTRON DEVICES AND MATERIALS SYMPOSIUM 2019
Effect of Annealing Treatment on Performance of Ga2O3 Conductive-Bridging Random-Access Memory KAI-JHIH GAN,1 PO-TSUN LIU,2,3 DUN-BAO RUAN,1 CHIH-CHIEH HSU,1 YU-CHUAN CHIU,2 and SIMON M. SZE1 1.—Department of Electronics Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, ROC. 2.—Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, ROC. 3.—e-mail: [email protected]
The effect of annealing on the performance of conductive-bridging randomaccess memory (CBRAM) with an amorphous gallium oxide (a-Ga2O3) switching layer has been studied. After annealing at 200°C in N2, a significant improvement of the bipolar resistive switching characteristics was observed. The a-Ga2O3 CBRAM showed good memory performance, with high switching endurance (up to 7.5 9 102 cycles) and high thermal stability. The resistive switching stability and electrical uniformity were also obviously improved. The memory window remained above 105 over 7.5 9 102 endurance cycles at 85°C. Material characterization by x-ray photoelectron spectroscopy suggested that the improved uniformity of the resistive switching in the N2-annealed Ga2O3 films may result from a higher density of oxygen vacancies. These results indicate great potential for such devices in future high-density nonvolatile memory applications. Key words: Gallium oxide (Ga2O3), oxygen vacancies, conductive-bridge random-access memory (CBRAM), physical vapor deposition
INTRODUCTION Resistive random-access memory (RRAM) has flourished over the last few years due to its simple structure, fast operating speed, and low power dissipation.1–4 Based on conventional conducting filament models, which are the most well-recognized resistive switching (RS) mechanism in RRAM, such devices can be divided into oxygen-vacancy-based RRAM (OxRRAM) and conductive-bridging randomaccess memory (CBRAM) systems.4,5 In OxRRAM, the RS phenomenon in the switching layer is dominated by the formation and rupture of conductive filaments caused by oxygen vacancies within the RRAM device.6 However, the RS phenomenon in
(Received December 3, 2019; accepted April 29, 2020)
CBRAM devices occurs via the formation and dissolution of Cu- or Ag-based conducting paths through the electrochemical process in the switching layer.7 Various metal oxides such as ZrO2,8 InWZnO,9 InGaZnO,10 and HfO211 have been found to be suitable materials for the switching layer in CBRAM. In addition, a novel material, gallium oxide (Ga2O3), is proposed herein as a switching layer material for CBRAM. Ga2O3 is a promising dielectric material due to its permittivity (k = 10– 14), while it is easy to fabricate at room temperature. Besides, Ga2O3 thin films also exhibit good chemical stability, low optical loss, and high refractive index. This material has been applied in thinfilm transistors (TFTs),12 high-tempe
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