Effect of Ar + Ion Implantation-Induced Microstructural Modifications on Electrical Conductivity of Glass RPC Detector M
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https://doi.org/10.1007/s11664-020-08358-6 Ó 2020 The Minerals, Metals & Materials Society
Effect of Ar+ Ion Implantation-Induced Microstructural Modifications on Electrical Conductivity of Glass RPC Detector Materials K.V. ANEESH KUMAR1 and H.B. RAVIKUMAR
1,2
1.—Department of Studies in Physics, University of Mysore, Mysore 570006, India. 2.—e-mail: [email protected]
Argon ions with energy of 1 MeV and 500 keV are implanted at various fluences into Asahi and Saint Gobain clear float glasses used for resistive plate chamber (RPC) detector fabrication. The decreased size of voids (Vf) in the selected glasses is interpreted as an increased short-range order of the glass structure at higher fluence of argon ion implantation. The increased local temperature influences the diffusion of argon ions via trapping in the silica glass voids for higher implantation fluence. The slight increase in bandgap energy (Eg) in the glass RPC detector materials at higher argon ion implantation fluence observed reduced electrical conductivity. The increased energy bandgap in the float glass RPC detector samples enhanced surface resistivity, consequently reducing the leakage current. Key words: RPC detectors, ion implantation, defects, diffusion, electrical conductivity, band gap energy
INTRODUCTION In the ongoing India-based Neutrino Observatory (INO) collaboration, float glasses procured from two different manufacturers, Asahi and Saint-Gobain, are used for the fabrication of resistive plate chambers (RPCs).1–3 These RPCs are treated as the major active detectors in the INO project, intended for the study of neutrinos and anti-neutrinos. It was previously reported that owing to the outstanding detector efficiency and smoothness, Asahi is the better glass in terms of material quality in comparison to other float glasses.4,5 The performance of RPC float glass detectors and time resolution is influenced by its constant use at high voltages for long periods.6 It is expected that the structural properties of glass RPC detectors are affected in the radiation-abundant experimental environment. To check the detector endurance in a high-energy radiation environment and to
(Received October 1, 2019; accepted July 24, 2020)
understand basic defect production, it is very important to perform a detailed study of the microstructure of glass RPC detector materials. Ion implantation has previously been exploited as a powerful method for structural modification of solid-state materials. The implantation of highenergy lighter or heavier ions predominantly affects Si–O–Si bonds in the glass network, and thus alters the chemical, physical, optical and electrical properties of silica glasses.7,8 The ion implantation energy, structural properties of glasses and percentage of SiO2 content are the major sources of structural modifications in silica-based clear float glasses.9 Therefore, to study the implantation-induced microstructural changes, Asahi and Saint Gobain RPC glass detector samples are exposed to 1 MeV and 500 keV argon ions at va
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