Effect of Cobalt Doping on Nanostructured CuO Thin Films
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he past few decades, nanostructured metal oxide materials such as nanotubes, nanowires, nanorods, nanoplates, and nanosheets have received great interest due to their unique physical and chemical properties and their potential applications in nanoscale devices.[16] Research on the structural, electrical, and optical properties of these materials proved the dependence of the properties on film preparation methods. Moreover, doping with different chemical elements had major influence on the physical properties of the films.[7] By controlling the doping level, one can obtain films with improved properties useful for different applications. Thus, there is great interest in the study of the correlation between the physical properties of the films and the concentration of doping elements. Cupric oxide (CuO) is a p-type transition metal oxide semiconductor with a narrow band gap (Eg = 1.2 to 2.2 eV)[8,9] and has monoclinic crystal structure. Recently, CuO has received much attention because of its various applications including in gas sensors, biosensors, solar energy transformation, catalysis, batteries, high-Tc superconductors, and pigments.[1016] To prepare undoped or doped CuO thin films, various deposition techniques were used such as sputtering,[17] electrodeposition,[18] thermal evaporation,[19] chemical vapor deposition,[20] sol-gel,[21] chemical bath deposition,[5] and successive ionic layer adsorption and reaction FATIH BAYANSAL, Assistant Professor, is with the Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, Hatay 31034, Turkey, and also with the Department of Metallurgical and Materials Engineering, Faculty of Technology, Mustafa Kemal University. Contact e-mail: [email protected] BU¨NYAMIN S ¸ AHIN, Assistant Professor, and HACI ALI C¸ETINKARA, Associate Professor, are with the Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University. TURAN TAS ¸ KO¨PRU¨, Research Assistant, is with the Department of Physics, Faculty of Science, Anadolu University, Eskis¸ehir 26470, Turkey. Manuscript submitted November 14, 2013. Article published online April 29, 2014 3670—VOLUME 45A, JULY 2014
(SILAR).[8] The SILAR method offers many advantages for the fabrication of thin films including simplicity, control of stoichiometry, cost-effectiveness, and feasibility of deposition on large-area substrates. Many investigations have been undertaken to improve the performance of thin films, and different transition metals such as Mn, Co, and Fe have been researched as promoter elements to develop improved properties of semiconductors.[9,22,23] Cobalt doping is expected to possess improved magnetic, hardness, and impact resistance properties[24] due to the interaction of the magnetic ion with band electrons. Generally, metal doping makes radical changes in optical, electrical, morphologic, and magnetic properties of CuO by altering its electronic structure.[25] Transition-metaldoped CuO has recently attracted considerable attention for its potential application in spintronics, ferromagnetism,
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