Doping Effect of Cobalt on Various Properties of Nickel Oxide Prepared by Solution Combustion Method
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ORIGINAL PAPER
Doping Effect of Cobalt on Various Properties of Nickel Oxide Prepared by Solution Combustion Method Khem Raj Sharma 1
&
N. S. Negi 1
Received: 8 October 2020 / Accepted: 3 November 2020 # Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract Pure and cobalt-doped (Co-2 to 10 mol%) nickel oxide (NiO) powder samples were prepared by solution combustion method and annealed at 600 °C for 2 h. The crystalline and structural properties were characterised by using X-ray diffraction (XRD) and Raman spectroscopy. Field emission scanning electron microscope (FESEM) and energy-dispersive spectroscopy (EDAX) techniques were used to study the surface morphology and characteristic elements present in samples. Higher value of retentivity (12.20 × 10−2 emu/g) and coercivity (900 Oe) is found for 10 mol% Co-doped NiO, which is much higher than pure NiO. Such properties improve the magnetic memory and hardness of a magnetic material. A decrease in an optical band gap from 2.67 to 2.05 eV was observed for pure and Co-doped (2 to 10 mol%) NiO powder samples, which is quite useful in optoelectronic devices. Maximum value of conductivity (11.23 × 10−6 Ω−1 cm−1) and dielectric constant (204) is found for Co 6 mol%-doped NiO. All the measurements were recorded at room temperature so as to utilise them for device fabrication readily. A significant improvement in magnetic, optical and dielectric properties was observed for NiO with increasing concentration of cobalt, which makes it a better choice for spintronic, optoelectronic, magnetic and storage devices. Keywords Co-doped NiO . Room temperature ferromagnetism . Raman spectroscopy . Optical band gap . Solution combustion method . Dielectric constant
1 Introduction In the present scenario, while the whole world is battling against corona pandemic, everything is switched on to the digitalisation and long-distance communication. In the current situation, we have to maintain the physical distance in public places and only virtual communication is allowed. We all are working from home through online mode. In such a despondent situation, material science plays a significant role in device fabrication and technological revolution which makes our lives more comfortable and liveable. Diluted magnetic semiconductors (DMS) are technologically potential materials for designing devices based on spintronics. Such materials are based on conventional semiconductors doped with low concentration of transition metals. These materials have the potential to exhibit both * Khem Raj Sharma [email protected] 1
Department of Physics, Himachal Pradesh University, Shimla, H.P 171005, India
ferromagnetic and semiconducting properties at room temperature which lead them to remarkable applications in spinbased and optoelectronic devices [1–3] There are many ntype DMS materials like ZnO, SnO2 and TiO2, which are generally used in spin transistors, spin-based polarised lightemitted diodes and optic-magnetic properties [4–8]. However, development of p-type cubic semicon
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