Effect of DC negative bias on microstructure and surface morphology of amorphous silicon carbide films prepared by HWP-C
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Effect of DC negative bias on microstructure and surface morphology of amorphous silicon carbide films prepared by HWP‑CVD Peiyu Ji1,2 · Jiali Chen1,2 · Tianyuan Huang4 · Chenggang Jin1,2 · Lanjian Zhuge3 · Xuemei Wu1,2 Received: 31 October 2019 / Accepted: 28 January 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract The effect of DC negative bias (− Vs) on microstructure and surface morphology of amorphous silicon carbide thin films prepared by helicon wave plasma chemical vapor deposition is reported. Microstructure and surface morphology were obtained by scanning electron microscope (SEM) and atomic force microscope (AFM). The results show that the increase of − Vs on the substrate make a more compact film and lower surface roughness, which can reach 0.56 nm. The XRD analysis reveals that the SiC thin films are of an amorphous structure. Percentages of carbon and silicon atoms (C/Si) were measured by energy dispersive spectrometer (EDS), and the C/Si ratio can reach 1.45. The structural properties of the films were studied by Raman spectroscopy techniques and Fourier transform infrared (FTIR). It is found that the films contain not only Si–C bonds but also Si–CHx bonds. Raman spectra results show that the proportion of disordered carbon in the films decreases with the increase of − Vs. The results of ultra-microhardness tester show that the hardness of the films increases with the increase of − Vs and the maximum mechanical hardness can reach 18.5 GPa at − Vs = − 60 V. Keywords Helicon wave plasma · Amorphous SiC thin films · DC negative bias · Microstructure and surface morphology · Mechanical hardness
1 Introduction Amorphous silicon carbides (α-SiCx) thin films have a number of unique physical and chemical properties, such as high thermal conductivity (2 W/mK) [1], large bandgap (2.0–4 eV) [2, 3], good electrical characteristics, high refractive index (2.54) [4], and high hardness (40 GPa) [5] making them attractive material for electronic and optoelectronic devices [6–9]. The electrical properties and current * Chenggang Jin [email protected] * Xuemei Wu [email protected] 1
School of Physics Science and Technology and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China
2
The Key Laboratory of Thin Films of Jiangsu, Soochow University, Suzhou 215006, China
3
Analysis and Testing Center, Soochow University, Suzhou 215123, China
4
College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
transfer mechanism of amorphous silicon carbide heterostructures were studied by [10, 11]. Based on the unique electrical properties, the device application of amorphous silicon carbide film was studied by MM Rahman et al. [12, 13]. The thermal conductivity of amorphous silicon carbide was studied by references [1, 14]. They confirmed that the low thermal conductivity was due to the disorder of the film structure. The microstructure and optical properties of amorphous silicon carbide thin
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