Characteristics of Cu/C Films on Polymer Substrate Prepared by Room Temperature ECR-MOCVD Coupled with Periodic DC Bias
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Characteristics of Cu/C Films on Polymer Substrate Prepared by Room Temperature ECR-MOCVD Coupled with Periodic DC Bias Joong Kee Lee*, 1Hyungduk Ko, 1Jin Hyun, 1Dongjin Byun, Byung Won Cho and Dalkeun Park Eco-Nano Research Center, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang Seoul 130-650, Korea, 1Dept. of Material Science, Korea University ABSTRACT Cu/C films were prepared at room temperature under Cu(hfac)2-Ar-H2 atmosphere in order to obtain metallized polymer by using ECR-MOCVD (Electron Cyclotron Resonance Metal Organic Chemical Vapor Deposition) coupled with periodic DC bias system. Room temperature MOCVD was possible when periodic negative voltage was applied on the polymer substrate. The periodic negative voltage induces ions and radicals to have nucleation reaction on the surface of the substrate. Formation of Cu/C films strongly depends on the periodic negative pattern of DC bias and the electric sheet resistance of the films was controlled from 108 to 100ohm/sq ranges by process parameters such as microwave power and magnet current. The increase in microwave power and magnet current brought on copper-rich film formation with low electric resistance. On the other hand carbon-rich films with high sheet electric resistance were prepared with decreased values for process parameters aforementioned. INTRODUCTION Metal composite in the form of thin film on the plastic substrate is very interesting material for microelectronic packaging and electromagnetic interference (EMI) shielding purpose [1,2]. Copper is very attractive for conductors due to its high electrical conductivity and electromigration resistance. For many applications, adhesion of the polymer with most metallic materials and film preparation temperature at low temperature, especially at room temperature are critical [3,4]. The operating temperature is in the range of 250 to 380oC for the preparation of copper thin films by conventional plasma enhanced chemical vapor deposition (PECVD). Therefore, employment of polymer substrate for the deposition of copper thin film at room temperature has never been tried by using MOCVD method. Recently, we found that MOCVD is possible at room temperature when periodic negative voltage is applied near the polymer substrate. In the present study, the structural and chemical analyses of the Cu/C films were carried out and their electrical resistance were determined as a function of H2/Ar mole ratio and periodic negative voltage. The deposition mechanism with special attention to the relationship between ions and electric potential was also explained.
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EXPERIMENTAL An Astex-1000 ECR plasma generator, a CVD reactor and a high vacuum system was employed to carry out the experiments. Cu(hfac)2 (hfac:1,1,1,5,5,5,-hexafluoro-2,4-pentandione) with purity 99.9% was used as a source of copper for the Cu/C thin film. The feed rate of Cu(hfac)2 was controlled by adjusting bubbler temperature and carrier gas flow rate through it. Argon was used as a carrier gas and hydrogen gas was fe
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