Effect of Growth Temperature on Structural and Magneto-Transport Properties of Co-Doped In 2 O 3 Diluted Magnetic Semico
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1119-L05-13
Effect of growth temperature on structural and magneto-transport properties of Co-doped In2O3 diluted magnetic semiconductors A. Ghosh, R.K. Gupta, P.K. Kahol, K. Ghosh Department of Physics, Astronomy, and Materials Science, Missouri State University, Springfield, Missouri-65897, USA ABSTRACT Recently, Diluted magnetic semiconductors (DMS) based on transition metal oxides have attracted considerable attention due to their potential applications in spintronic devices. In2O3 is a wideband gap semiconductor with unique optical and electrical properties. The high conductivity of In2O3 is due to presence of interstitial oxygen vacancy. By doping with the transition metal such as cobalt, the possibility of room temperature ferromagnetism is expected. Thin films of Co-doped In2O3 diluted magnetic semiconductor have been grown on c-plane sapphire single crystals using pulsed laser deposition technique. Different characterizations such as x-ray diffraction, atomic force microscopy, and magneto-transport have been carried out to study the effect of growth temperature on the structural, electrical, and magnetic properties of these films. The films grown at high temperature have preferred orientation along (222) direction, while films grown at low temperature show amorphous nature. It is observed that electrical properties of the films strongly depend on growth temperature. The resistivity of the films decreases with increase in growth temperature. On the other hand, mobility of the films increases with increase in growth temperature. This could be due to improvement in crystallinity of the films. INTRODUCTION Diluted magnetic semiconductors (DMS) are rare group of promising semiconductor compounds in which a fraction of the constituent ions is replaced by magnetic ions [1]. DMS offers a possibility of studying the magnetic phenomena in crystals with a simple band structure and excellent magneto-optical and transport properties. The magnetic properties of these semiconductors can be tuned not only by an external magnetic field but by varying the band structure and/or carrier, impurity and magnetic ion concentrations [2]. It has been found that doping metal oxides such as ZnO, TiO2, and In2O3 with magnetic ions such as Fe, Co, Mn, and Cr produces DMS, which exhibit ferromagnetism above room temperature [3]. In2O3, a transparent opto-electronic material, is an interesting prospect for spintronics due to a unique combination of magnetic, electrical, and optical properties [4]. Pure and doped indium oxide is a widely used transparent conducting oxide with tunable carrier concentration and mobility [5,6]. Recently, high temperature ferromagnetism in manganese doped indium tin oxide is observed using thermal evaporation technique [7]. Kim et al have also reported the ferromagnetism in chromium doping indium oxide films using pulsed laser deposition technique [8]. The effect of carrier concentration on ferromagnetism is studied in details. In this proceedings paper, we report the effect of growth temperature on structura
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