Effect of Induced Charges on the Performance of Different Dielecteric Layers of c-Si Solar Cell by Experimental and Theo
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ORIGINAL PAPER
Effect of Induced Charges on the Performance of Different Dielecteric Layers of c-Si Solar Cell by Experimental and Theoretical Approach Soma Ray 1,2 & Baishakhi Pal 1,3 & Hemanta Ghosh 4 & Suchismita Mitra 4 & Anup Kumar Mondal 2,5 & Chandan Banerjee 6 & Hiranmoy Saha 2 & Utpal Gangopadhyay 1 Received: 7 June 2019 / Accepted: 12 December 2019 # Springer Nature B.V. 2020
Abstract Surface passivation plays critical role in enhancing Silicon Solar cell performance. Selection of proper passivation layers on n and p type c-Si is a major challenge. Induced charge of dielectric layers is considered as an important parameter while chhoosing proper passivation layer on n and p type silicon. In this article, we report suitable choice of different dielectric layers on n-type cSi Solar cell on the basis of induced charge machanism and its impact on density of state of n-type c-Si Solar cell. Effect of induced charges of different dielectric layers is elucidated through theoretical approach. Lastly, we show the calculation of the Dit and minority carrier lifetime (τ). We found that Dit of Al2O3 and SiO2 is about 1011 cm 2 eV−1 range while TiO2, HfO2 is 1013 cm 2 eV−1 range and SiNx is 1012 cm 2 eV−1 range. We have validated the theoretical results by experiments. Keywords Surface passivation . Induced charge . Density of states . Lifetime . N-type c-Si . Solar cell efficiency
1 Introduction In modern era, surface passivation is one of the key parameter to enhance the overall efficiency of Solar cell [1].Surface passivation is usually used to saturate the dangling bonds as well as field passivation in silicon surface [2–5]. Proper induced charges at the interface determine the suitability of dielectric materials. Low defect density and fixed induced negative charges ensure the proper passivation layer on ntype silicon Solar cell. Dielectric layers are required to passivate the interface of metal-semiconductor. Al2O3 is a * Utpal Gangopadhyay [email protected] 1
Centre of Advanced Research in Renewable Energy and Sensor Technology, MSIT, Nazirabad, Uchhepote, Via-Sonarpur, Kolkata, West Bengal 700150, India
2
Centre of Excellence for Green Energy and Sensor Systems, IIEST, Shibpur, Howrah 711103, India
3
Jadavpur University, Kolkata, West Bengal 700032, India
4
Chaibasa Engineering College, Chaibasa, India
5
Department of Chemistry, IIEST, Shibpur, Howrah, West Bengal 711103, India
6
National Institute of Solar Energy, Faridabad Road, Gwalpahari, Gurugram, Haryana 122003, India
commercially available passivation layer on n-type C-Si Solar cell emitter surface due to its high built in negative fixed or induced charge density and low interface trap charge density (Dit ≤ 1011 eV−1 cm−2). It has been reported that Al2O3 layer deposited by ALD unit show excellent performance of saturating the dangling bonds on p-type C-Si structure whereas in case of n-type c-Si, Solar cell emitter surface should be p doped. After annealing, the passivation performance is further improved [5–7]. Similarly HfO2, TiO
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