Effect of irradiation with reactor neutrons and the temperature of subsequent heat treatment on the structure of InP sin
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C STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Effect of Irradiation with Reactor Neutrons and the Temperature of Subsequent Heat Treatment on the Structure of InP Single Crystals V. M. Boœkoa, V. T. Bublikb, M. I. Voronovab, N. G. Kolina^, D. I. Merkurisova, and K. D. Shcherbatchevb aObninsk
Branch, Unitary Federal State Enterprise Karpov Institute of Physical Chemistry, Obninsk, 249033 Russia ^e-mail: [email protected] bMoscow State Institute of Steel and Alloys (Technological University), Moscow, 119049 Russia Submitted August 23, 2005; accepted for publication October 10, 2005
Abstract—The results of studying the features of the effect of irradiation with fast and full-spectrum reactor neutrons and subsequent heat treatments on the structural characteristics of InP single crystals are reported. It is shown that, in contrast to other III–V semiconductor compounds, the lattice constant decreases in InP as a result of irradiation with neutrons. Fast neutrons make the major contribution to the variation in the lattice constant. The presence of the component of thermal neutrons that give rise to Sn atoms in the material does not bring about any appreciable variation in the lattice constant. Heat treatment of irradiated samples at temperatures as high as 600°C leads to annealing of radiation defects and recovery of the lattice constant; in the samples irradiated with high neutron fluences, the lattice constant becomes even larger than that before irradiation. An analysis of the obtained experimental data made it possible to assume that the decrease in the InP lattice constant as a result of irradiation with neutrons is mainly caused by the introduction of the PIn antisite defects that give rise to an effect similar to that of vacancy-related defects. PACS numbers: 61.66.-f, 61.80.Hg, 61.82.Fk, 81.40.Wx, 81.40.Gh DOI: 10.1134/S1063782606060017
1. INTRODUCTION The method of nuclear-transmutation doping by irradiation with reactor neutrons has become one the main technological processes for obtaining uniformly doped Si single crystals [1–4]. The process is developed to a lesser extent for GaAs [4, 5] and other III–V compounds such as InAs [6], InSb [7], and InP [8, 9]. The issues concerning the production and annealing of radiation defects and the features of their effect on the properties of materials and characteristics of devices are very important when radiation-related methods are used in the technology of production of semiconductor devices and are also useful in estimating the radiation resistance of these devices. Kolin et al. [10, 11] studied the electrical properties of InP irradiated with neutrons. It was shown that the concentration of charge carriers and their mobility decrease immediately after irradiation of n-InP with fluences as high as 1018 cm–2 of the fast and full-spectrum reactor neutrons (with the ratio between the flux densities of the thermal and fast neutrons equal to ϕsn/ϕfn ≈ 1). Subsequent heat treatment makes it possible to anneal out the radiation defects and stabilize the p
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