Effect of Single-Wall Carbon Nanotubes Layer on Photoelectric Response of Au/Si Photovoltaic Structures

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Effect of Single-Wall Carbon Nanotubes Layer on Photoelectric Response of Au/Si Photovoltaic Structures Nicholas L. Dmitruk1, OlgaYu. Borkovskaya1, Tetyana.S. Havrylenko1, Sergey V. Mamykin 1, VladimirR. Romanyuk 1 and ElenaV. Basiuk 2 1 V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, 03028, Ukraine 2 Centro de Ciencias Aplicadas y Desarrollo Tecnológico Universidad Nacional Autónoma de México, Circuito Exterior C. U., 04510, México D.F. Mexico

ABSTRACT The effect of the deposited on Si substrate Single-wall carbon nanotube (SWCNT) nanolayers on optical, photoelectric and electrical properties of Au/n-Si structures has been investigated. Highly purified SWСNTs were prepared by the arc-discharge method. The significant enhancement of the photocurrent (increasing to the long-wave range) and the photoconversion efficiency was found for structures with SWСNT and its mechanism was analyzed with taking into account optical and electrical characteristics of structures. INTRODUCTION Single-wall carbon nanotubes (SWCNT) as well as the other low-dimensional carbon materials have attracted great interest for the applications in nanoelectronics and optoelectronics due to their unique physical properties [1]. Specifically, SWCNTs are proposed for the photovoltaic efficiency enhancement in organic photovoltaic devices due to the introduction in the polymer photoactive layer [2] or using them as conductive transparent electrode [3, 4] that can exceed the performance of indium tin oxide (ITO) material. The enhancement of the shortcircuit photocurrent and photoconversion efficiency was found recently for the metal/n-Si structures with the fullerene C60 intermediate layer [5]. Unlike the fullerens, SWNTs are known to have characteristic electronic structure of spike like density of states (the van Hove singularities) due to the one-dimensional structure [6], exhibiting either semiconducting or metallic behavior. The energy gaps between spikes are determined by chiral indexes and diameters of SWNTs, the values and distribution of which are dependent on the method and parameters of SWNT synthesis [6, 7]. In its turn, the optical and electrical properties of SWCNT thin films deposited on semiconducting or dielectric substrates are greatly affected by both the methods of deposition and solvents (or surfactants) used for untangling bundles of SWCNTs and also by preliminary substrate processing, which improves adhesion of SWCNT. In this work we investigate the effect of the deposited SWNT nanolayers on the Si substrate on optical, photoelectric and electrical properties of Au/n-Si structures that can be perspective for photovoltaic applications in solar cells.

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EXPERIMENTAL DETAILS — Highly purified SWCNTs, synthesized by the arc-discharge method, were deposited on n-Si and on glass substrates. — To improve adhesion of SWCNT to a substrate, the well-sonicated SWCNT-ethanol mixture was deposited on Si and glass surfaces modified with poly (vinil pyridine) (PVP)ethanol solution, earlier

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