Effect of surface cleaning on contact resistivity of amorphous GeCu 2 Te 3 to a W electrode
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Effect of surface cleaning on contact resistivity of amorphous GeCu2Te3 to a W electrode S. Shindo, Y. Sutou, J. Koike, Y. Saito and Y.-H. Song MRS Advances / FirstView Article / July 2016, pp 1 - 6 DOI: 10.1557/adv.2016.310, Published online: 03 May 2016
Link to this article: http://journals.cambridge.org/abstract_S2059852116003108 How to cite this article: S. Shindo, Y. Sutou, J. Koike, Y. Saito and Y.-H. Song Effect of surface cleaning on contact resistivity of amorphous GeCu2Te3 to a W electrode. MRS Advances, Available on CJO 2016 doi:10.1557/adv.2016.310 Request Permissions : Click here
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MRS Advances © 2016 Materials Research Society DOI: 10.1557/adv.2016.310
Effect of surface cleaning on contact resistivity of amorphous GeCu2Te3 to a W electrode S. Shindo1, Y. Sutou1, J. Koike1, Y. Saito2 and Y.-H. Song3 1 Department of Materials Science, Tohoku University, 6-6-11 Aoba-yama, Aoba-ku, Sendai 9808579, Japan 2 Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba 305-8565, Japan 3 Department of Electronic Engineering, Hanyang University, Seoul 133-791, Korea ABSTRACT The contact resistivity, ρc, between phase change material (PCM) and an electrode plays an important role in the operation of highly scaled phase change random access memory (PCRAM). We investigated the effect of surface cleaning on the ρc between a W electrode and amorphous GeCu2Te3 (GCT) which shows high thermal stability. The surface cleaning of the amorphous GCT was conducted by Ar reverse sputtering. The ρc of the amorphous GCT whose surface was cleaned with Ar reverse sputtering was 6.7×10-3Ω cm2. Meanwhile, the ρc of the amorphous GCT with no surface cleaning was 8.0×10-5Ω cm2. The low ρc in the amorphous GCT with no surface cleaning was apparently due to the existence of a low resistance Cu-rich underlayer which was formed as a consequence of surface oxidation of the amorphous GCT. These results indicate that the surface of a PCM must be treated carefully to accurately measure the contact resistivity between the PCM and electrodes.
INTRODUCTION To overcome the scaling limit of flash memory, phase change random access memory (PCRAM) has been widely studied as a next generation non-volatile memory and is characterized by a fast access speed, a low power operation, a large resistance contrast and a high scalability [1-2]. PCRAM consists of memory cells composed of a phase change material (PCM) sandwiched between electrodes. PCM shows a drastic change in electrical resistance upon a phase transition between amorphous and crystalline states, which is induced by Joule heating using electrical pulses. Therefore, data can be recorded as differences in electrical resistance between the high resistance amorphous and low resistance crystall
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