Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HE
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Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HEMTs on Si substrates Yuya Yamaoka, Kazuhiro Ito, Akinori Ubukata, Toshiya Tabuchi, Koh Matsumoto and Takashi Egawa MRS Advances / FirstView Article / July 2016, pp 1 - 6 DOI: 10.1557/adv.2016.431, Published online: 08 June 2016
Link to this article: http://journals.cambridge.org/abstract_S205985211600431X How to cite this article: Yuya Yamaoka, Kazuhiro Ito, Akinori Ubukata, Toshiya Tabuchi, Koh Matsumoto and Takashi Egawa Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HEMTs on Si substrates. MRS Advances, Available on CJO 2016 doi:10.1557/adv.2016.431 Request Permissions : Click here
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MRS Advances © 2016 Materials Research Society DOI: 10.1557/adv.2016.431
Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HEMTs on Si substrates Yuya Yamaoka1,2, Kazuhiro Ito1, Akinori Ubukata2, Toshiya Tabuchi2, Koh Matsumoto2, and Takashi Egawa1 1 Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, Aichi 466-8555, Japan 2 Taiyo Nippon Sanso Corporation, 10 Ohkubo, Tsukuba-shi, Ibaraki 300-2611, Japan ABSTRACT In this study, the initial AlN layer and the vertical-direction breakdown voltage (VDBV) of AlGaN/GaN high-electron-mobility transistors (HEMTs) were characterized. Prior to the formation of the interface between the AlN layer and the Si substrate, only trimethylaluminum (TMA) was introduced without ammonia to control the crystal quality of initial AlN layer (TMA preflow). HEMT structures were simultaneously grown on identical AlN layers on Si substrates (AlN/Si templates) grown using different TMA preflow temperatures. The density of screw- or mixed-type dislocations in the initial AlN layer decreased as the TMA preflow temperature increased. Further, the VDBV of the HEMT structure increased as the TMA preflow temperature increased. It is supposed that the screw- or mixed-type dislocations are the possible source of the vertical leakage current in the HEMT structures. The improvement in the crystal quality of the initial AlN layer affects the increase in the VDBV of the AlGaN/GaN HEMTs on Si substrates. INTRODUCTION AlGaN/GaN high-electron-mobility transistors (HEMTs) on Si substrates are expected to realize low-cost, low-loss, and high-output-power devices [1]. One of the main issues with AlGaN/GaN HEMTs on Si substrates is the relatively low vertical-direction breakdown voltage (VDBV) compared to the theoretical value. The VDBV can be increased by increasing the epitaxial buffer layer because of the decrease in the electric field in the epitaxial buffer layer. However, AlGaN/GaN HEMTs on Si substrates with thicker epitaxial layers have some dis
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